{"title":"Development of high-performance Cu nanoparticle paste and low-temperature sintering for Cu–Cu bonding","authors":"Jiaqiang Huang, Zhiling Ning, Caiping Yu, Dongjing Liu, Yujie Liu, Dawei Xiao","doi":"10.1007/s10854-025-14586-5","DOIUrl":null,"url":null,"abstract":"<div><p>The sintering technology of Cu nanoparticle paste has significant potential for application in wide bandgap semiconductor devices. In this study, a high-performance and multi-scale Cu nanoparticle paste is proposed to solve the critical issues of easy oxidation during preparation and storage, as well as high sintering temperature. The multi-scale Cu nanoparticles with sizes ranging from 20 to 140 nm were synthesized simply and efficiently using a liquid-phase reduction method. These nanoparticles were subsequently mixed with a reducing composite solvent to develop a Cu nanoparticle paste. Based on this paste, pressure-assisted Cu–Cu bonding experiments were conducted at various temperatures and durations. The Cu–Cu joints achieve an average shear strength of 33.3 MPa after sintering at 240 °C in a nitrogen atmosphere and even exceed 60 MPa when the temperature is raised to 280 ℃. Additionally, with a reductive surface coating, the multi-scale Cu nanoparticles can be stored for over 20 days under ambient air condition. Besides, the enhanced bonding strength and dense microstructure are attributed to the close-packing effect of multi-scale nanoparticles and the facilitation of small size nanoparticles. The proposed multi-scale Cu nanoparticle paste exhibits excellent oxidation resistance and low-temperature sintering performance, which demonstrates significant potential for application in power device packaging and interconnection.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14586-5","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Development of high-performance Cu nanoparticle paste and low-temperature sintering for Cu–Cu bonding
The sintering technology of Cu nanoparticle paste has significant potential for application in wide bandgap semiconductor devices. In this study, a high-performance and multi-scale Cu nanoparticle paste is proposed to solve the critical issues of easy oxidation during preparation and storage, as well as high sintering temperature. The multi-scale Cu nanoparticles with sizes ranging from 20 to 140 nm were synthesized simply and efficiently using a liquid-phase reduction method. These nanoparticles were subsequently mixed with a reducing composite solvent to develop a Cu nanoparticle paste. Based on this paste, pressure-assisted Cu–Cu bonding experiments were conducted at various temperatures and durations. The Cu–Cu joints achieve an average shear strength of 33.3 MPa after sintering at 240 °C in a nitrogen atmosphere and even exceed 60 MPa when the temperature is raised to 280 ℃. Additionally, with a reductive surface coating, the multi-scale Cu nanoparticles can be stored for over 20 days under ambient air condition. Besides, the enhanced bonding strength and dense microstructure are attributed to the close-packing effect of multi-scale nanoparticles and the facilitation of small size nanoparticles. The proposed multi-scale Cu nanoparticle paste exhibits excellent oxidation resistance and low-temperature sintering performance, which demonstrates significant potential for application in power device packaging and interconnection.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.