光刻中污染物的表征和去除

IF 6.4 1区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY
Yawen Gao, Changsheng Chen, Feng Wang, Mingbo Li, Chao Sun
{"title":"光刻中污染物的表征和去除","authors":"Yawen Gao,&nbsp;Changsheng Chen,&nbsp;Feng Wang,&nbsp;Mingbo Li,&nbsp;Chao Sun","doi":"10.1007/s11433-024-2538-9","DOIUrl":null,"url":null,"abstract":"<div><p>Photolithography is a foundational technique for manufacture compact chips in semiconductor industries. Regulating and cleaning contaminants in lithographic processes are crucial for achieving the higher resolution and smaller feature sizes, which contain a variety of physical phenomena related to fluid dynamics. In this review, we will first introduce the basic principles of two mainstream lithography, namely deep ultraviolet (DUV) lithography and extreme ultraviolet (EUV) lithography. We critically review several types of contaminants such as droplets, bubbles, particles and chemical organic pollutants, highlighting the advanced techniques for identifying the nano-substances and fluid behaviours. Then the control strategies for mitigating contaminants are reviewed, especially for the contamination removal on photomask, the improvement on the purity of immersion liquid and efficient cleaning treatment for wafer surface. This review underscores the critical need for advanced contaminant management strategies in photolithography, integrating innovative cleaning techniques that promise to elevate lithographic performance and drive future developments in semiconductor technology.</p></div>","PeriodicalId":774,"journal":{"name":"Science China Physics, Mechanics & Astronomy","volume":"68 9","pages":""},"PeriodicalIF":6.4000,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Characterization and removal of contaminants in lithography\",\"authors\":\"Yawen Gao,&nbsp;Changsheng Chen,&nbsp;Feng Wang,&nbsp;Mingbo Li,&nbsp;Chao Sun\",\"doi\":\"10.1007/s11433-024-2538-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Photolithography is a foundational technique for manufacture compact chips in semiconductor industries. Regulating and cleaning contaminants in lithographic processes are crucial for achieving the higher resolution and smaller feature sizes, which contain a variety of physical phenomena related to fluid dynamics. In this review, we will first introduce the basic principles of two mainstream lithography, namely deep ultraviolet (DUV) lithography and extreme ultraviolet (EUV) lithography. We critically review several types of contaminants such as droplets, bubbles, particles and chemical organic pollutants, highlighting the advanced techniques for identifying the nano-substances and fluid behaviours. Then the control strategies for mitigating contaminants are reviewed, especially for the contamination removal on photomask, the improvement on the purity of immersion liquid and efficient cleaning treatment for wafer surface. This review underscores the critical need for advanced contaminant management strategies in photolithography, integrating innovative cleaning techniques that promise to elevate lithographic performance and drive future developments in semiconductor technology.</p></div>\",\"PeriodicalId\":774,\"journal\":{\"name\":\"Science China Physics, Mechanics & Astronomy\",\"volume\":\"68 9\",\"pages\":\"\"},\"PeriodicalIF\":6.4000,\"publicationDate\":\"2025-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Science China Physics, Mechanics & Astronomy\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11433-024-2538-9\",\"RegionNum\":1,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Science China Physics, Mechanics & Astronomy","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s11433-024-2538-9","RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

光刻技术是半导体行业制造紧凑型芯片的基础技术。光刻工艺中污染物的调节和清洁对于实现更高分辨率和更小尺寸的特征至关重要,其中包含与流体动力学相关的各种物理现象。在本综述中,我们将首先介绍两种主流光刻技术的基本原理,即深紫外(DUV)光刻技术和极紫外(EUV)光刻技术。我们将对液滴、气泡、颗粒和化学有机污染物等几类污染物进行严格审查,重点介绍识别纳米物质和流体行为的先进技术。然后,回顾了减少污染物的控制策略,特别是清除光掩膜上的污染物、提高浸入液体的纯度和晶片表面的高效清洁处理。这篇综述强调了光刻技术中对先进污染物管理策略的迫切需要,整合了创新的清洁技术,有望提升光刻性能,推动半导体技术的未来发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Characterization and removal of contaminants in lithography

Photolithography is a foundational technique for manufacture compact chips in semiconductor industries. Regulating and cleaning contaminants in lithographic processes are crucial for achieving the higher resolution and smaller feature sizes, which contain a variety of physical phenomena related to fluid dynamics. In this review, we will first introduce the basic principles of two mainstream lithography, namely deep ultraviolet (DUV) lithography and extreme ultraviolet (EUV) lithography. We critically review several types of contaminants such as droplets, bubbles, particles and chemical organic pollutants, highlighting the advanced techniques for identifying the nano-substances and fluid behaviours. Then the control strategies for mitigating contaminants are reviewed, especially for the contamination removal on photomask, the improvement on the purity of immersion liquid and efficient cleaning treatment for wafer surface. This review underscores the critical need for advanced contaminant management strategies in photolithography, integrating innovative cleaning techniques that promise to elevate lithographic performance and drive future developments in semiconductor technology.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Science China Physics, Mechanics & Astronomy
Science China Physics, Mechanics & Astronomy PHYSICS, MULTIDISCIPLINARY-
CiteScore
10.30
自引率
6.20%
发文量
4047
审稿时长
3 months
期刊介绍: Science China Physics, Mechanics & Astronomy, an academic journal cosponsored by the Chinese Academy of Sciences and the National Natural Science Foundation of China, and published by Science China Press, is committed to publishing high-quality, original results in both basic and applied research. Science China Physics, Mechanics & Astronomy, is published in both print and electronic forms. It is indexed by Science Citation Index. Categories of articles: Reviews summarize representative results and achievements in a particular topic or an area, comment on the current state of research, and advise on the research directions. The author’s own opinion and related discussion is requested. Research papers report on important original results in all areas of physics, mechanics and astronomy. Brief reports present short reports in a timely manner of the latest important results.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信