基于增强脉冲消失测试的3D-DRAM中tsv小延迟故障的内置自修复

IF 2.8 2区 工程技术 Q2 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Chen-Yu Huang;Shi-Yu Huang
{"title":"基于增强脉冲消失测试的3D-DRAM中tsv小延迟故障的内置自修复","authors":"Chen-Yu Huang;Shi-Yu Huang","doi":"10.1109/TVLSI.2024.3514732","DOIUrl":null,"url":null,"abstract":"In a 3D-DRAM, multiple DRAM dice are stacked together and bonded vertically with through-silicon vias (TSVs). It is known that a 3D-DRAM could operate at a very high speed, and even a small delay fault could cause a failure. Even though numerous prior works have been proposed to perform built-in self-repair (BISR) for faulty TSVs in a 3D-DRAM, they cannot handle sub-100-ps small delay faults easily. In this work, we aim to fix this problem with a “progressively shrinking pulse-vanishing test (PV-Test).” Our BISR scheme streamlines the entire test-and-repair (TAR) process integrating several techniques, including small-delay-fault detection, on-the-spot diagnosis, test result broadcasting, TSV repair, and the final validation. The experimental results show that it can indeed detect and repair a small delay fault that causes a sub-100-ps extra delay on a TSV.","PeriodicalId":13425,"journal":{"name":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","volume":"33 4","pages":"1132-1144"},"PeriodicalIF":2.8000,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Built-In Self-Repair of Small Delay Faults Occurring to TSVs in a 3D-DRAM Using an Enhanced Pulse-Vanishing Test\",\"authors\":\"Chen-Yu Huang;Shi-Yu Huang\",\"doi\":\"10.1109/TVLSI.2024.3514732\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In a 3D-DRAM, multiple DRAM dice are stacked together and bonded vertically with through-silicon vias (TSVs). It is known that a 3D-DRAM could operate at a very high speed, and even a small delay fault could cause a failure. Even though numerous prior works have been proposed to perform built-in self-repair (BISR) for faulty TSVs in a 3D-DRAM, they cannot handle sub-100-ps small delay faults easily. In this work, we aim to fix this problem with a “progressively shrinking pulse-vanishing test (PV-Test).” Our BISR scheme streamlines the entire test-and-repair (TAR) process integrating several techniques, including small-delay-fault detection, on-the-spot diagnosis, test result broadcasting, TSV repair, and the final validation. The experimental results show that it can indeed detect and repair a small delay fault that causes a sub-100-ps extra delay on a TSV.\",\"PeriodicalId\":13425,\"journal\":{\"name\":\"IEEE Transactions on Very Large Scale Integration (VLSI) Systems\",\"volume\":\"33 4\",\"pages\":\"1132-1144\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2024-12-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Very Large Scale Integration (VLSI) Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10816700/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Very Large Scale Integration (VLSI) Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10816700/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
引用次数: 0

摘要

在3D-DRAM中,多个DRAM芯片堆叠在一起,并通过硅通孔(tsv)垂直粘合。据悉,3d dram的运行速度非常快,即使是很小的延迟故障也可能导致故障。尽管许多先前的工作已经提出对3D-DRAM中的故障tsv进行内置自我修复(BISR),但它们无法轻松处理低于100-ps的小延迟故障。在这项工作中,我们的目标是通过“逐步缩小脉冲消失测试(PV-Test)”来解决这个问题。我们的BISR方案集成了几种技术,包括小延迟故障检测、现场诊断、测试结果广播、TSV修复和最终验证,简化了整个测试和修复(TAR)过程。实验结果表明,该方法确实可以检测和修复导致TSV额外延迟低于100ps的小延迟故障。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Built-In Self-Repair of Small Delay Faults Occurring to TSVs in a 3D-DRAM Using an Enhanced Pulse-Vanishing Test
In a 3D-DRAM, multiple DRAM dice are stacked together and bonded vertically with through-silicon vias (TSVs). It is known that a 3D-DRAM could operate at a very high speed, and even a small delay fault could cause a failure. Even though numerous prior works have been proposed to perform built-in self-repair (BISR) for faulty TSVs in a 3D-DRAM, they cannot handle sub-100-ps small delay faults easily. In this work, we aim to fix this problem with a “progressively shrinking pulse-vanishing test (PV-Test).” Our BISR scheme streamlines the entire test-and-repair (TAR) process integrating several techniques, including small-delay-fault detection, on-the-spot diagnosis, test result broadcasting, TSV repair, and the final validation. The experimental results show that it can indeed detect and repair a small delay fault that causes a sub-100-ps extra delay on a TSV.
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来源期刊
CiteScore
6.40
自引率
7.10%
发文量
187
审稿时长
3.6 months
期刊介绍: The IEEE Transactions on VLSI Systems is published as a monthly journal under the co-sponsorship of the IEEE Circuits and Systems Society, the IEEE Computer Society, and the IEEE Solid-State Circuits Society. Design and realization of microelectronic systems using VLSI/ULSI technologies require close collaboration among scientists and engineers in the fields of systems architecture, logic and circuit design, chips and wafer fabrication, packaging, testing and systems applications. Generation of specifications, design and verification must be performed at all abstraction levels, including the system, register-transfer, logic, circuit, transistor and process levels. To address this critical area through a common forum, the IEEE Transactions on VLSI Systems have been founded. The editorial board, consisting of international experts, invites original papers which emphasize and merit the novel systems integration aspects of microelectronic systems including interactions among systems design and partitioning, logic and memory design, digital and analog circuit design, layout synthesis, CAD tools, chips and wafer fabrication, testing and packaging, and systems level qualification. Thus, the coverage of these Transactions will focus on VLSI/ULSI microelectronic systems integration.
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