铋掺杂改善ZnO透明电极结构畸变的研究

IF 6.3 2区材料科学 Q2 CHEMISTRY, PHYSICAL

Journal of Alloys and Compounds Pub Date : 2025-03-23 DOI:10.1016/j.jallcom.2025.179962

Phung Y Nguyen, Trang Thuy Thi Phan, Oanh Kieu Truong Le, Dung Van Hoang, Thu Bao Nguyen Le, Hoa Thi Lai, Thuy Dieu Thi Ung, Vinh Cao Tran, Thang Bach Phan, Anh Tuan Thanh Pham

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引用次数: 0

摘要

采用射频磁控溅射技术在玻璃衬底上沉积了掺杂不同浓度杂质的双掺杂ZnO薄膜。研究了铋浓度对薄膜结构、电学和光学性能的影响。本研究表明，在% Bi时掺杂浓度为1是提高ZnO薄膜晶体质量和光电特性的最佳选择。在此浓度下，薄膜表现出理想的特性，如高可见光区透过率（约80%），1.3×10-3 Ω的低电阻率。Cm，载流子密度高，为3.8×1020 Cm -3。此外，铋杂质的存在通过减少ZnO晶格中的点缺陷来降低薄膜的残余应力、结构畸变和载流子迁移率。

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A depression in structural distortion to improve transparent ZnO electrodes by bismuth doping

Bi-doped ZnO thin films were deposited on glass substrates using radio frequency magnetron sputtering, with varying concentrations of impurities. The effect of Bi concentration on the structural, electrical, and optical properties of these films was investigated. This study indicates that a doping concentration of 1 at% Bi is optimal for enhancing the crystalline quality and photoelectric characteristics of the ZnO films. At this concentration, the films exhibit desirable attributes such as high visible region transmittance (approximately 80%), low resistivity of 1.3×10^-3 Ω.cm, and a high carrier density of 3.8×10²⁰cm^-3. Furthermore, the presence of Bi impurity was demonstrated to decrease the residual stress, structural distortion, and carrier mobility of the films by reducing point defects in ZnO lattice.

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来源期刊

Journal of Alloys and Compounds 工程技术-材料科学：综合

CiteScore

11.10

自引率

14.50%

发文量

5146

审稿时长

67 days

期刊介绍： The Journal of Alloys and Compounds is intended to serve as an international medium for the publication of work on solid materials comprising compounds as well as alloys. Its great strength lies in the diversity of discipline which it encompasses, drawing together results from materials science, solid-state chemistry and physics.