基于p-NiO/n-Ga₂O₃异质结的垂直Ga₂O₃结势垒Schottky二极管的温度敏感性

IF 4.3 2区综合性期刊 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Sensors Journal Pub Date : 2025-02-13 DOI:10.1109/JSEN.2025.3539531

Liang He;Enliang Li;Xiaoyue Duan;Mowen Zhang;Teng Ma;Hongyue Wang;Chao Li;Yuan Chen;Yiqiang Chen;Liuan Li

{"title":"基于p-NiO/n-Ga₂O₃异质结的垂直Ga₂O₃结势垒Schottky二极管的温度敏感性","authors":"Liang He;Enliang Li;Xiaoyue Duan;Mowen Zhang;Teng Ma;Hongyue Wang;Chao Li;Yuan Chen;Yiqiang Chen;Liuan Li","doi":"10.1109/JSEN.2025.3539531","DOIUrl":null,"url":null,"abstract":"A vertical Ga2O3 junction-barrier Schottky (JBS) diode is fabricated using selective p-NiO/n-Ga2O3 heterojunction and applied in temperature sensing. Compared with the Schottky barrier diode (SBD), the JBS device has a higher turn-on voltage and a lower current density. The room-temperature Schottky barrier height and ideality factor are 1.2 eV and 1.2 for the SBD device, whereas they are 1.2 eV and 1.5 for the JBS device, respectively. Therefore, the heterojunction parts of the JBS device contribute to the relatively lower current density. The sensitivities of diodes are obtained from the subthreshold regions of temperature-dependent current-voltage (I–V) curves, which increase with decreased current for both kinds of diodes. However, the sensitivity of JBS under a specific current level is relatively higher than that of SBD even when considering the conduction area. This higher sensitivity is ascribed to the relatively larger ideality factor.","PeriodicalId":447,"journal":{"name":"IEEE Sensors Journal","volume":"25 6","pages":"9401-9407"},"PeriodicalIF":4.3000,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature Sensitivity of Vertical Ga₂O₃ Junction Barrier Schottky Diode Using the p-NiO/n-Ga₂O₃ Heterojunction\",\"authors\":\"Liang He;Enliang Li;Xiaoyue Duan;Mowen Zhang;Teng Ma;Hongyue Wang;Chao Li;Yuan Chen;Yiqiang Chen;Liuan Li\",\"doi\":\"10.1109/JSEN.2025.3539531\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A vertical Ga2O3 junction-barrier Schottky (JBS) diode is fabricated using selective p-NiO/n-Ga2O3 heterojunction and applied in temperature sensing. Compared with the Schottky barrier diode (SBD), the JBS device has a higher turn-on voltage and a lower current density. The room-temperature Schottky barrier height and ideality factor are 1.2 eV and 1.2 for the SBD device, whereas they are 1.2 eV and 1.5 for the JBS device, respectively. Therefore, the heterojunction parts of the JBS device contribute to the relatively lower current density. The sensitivities of diodes are obtained from the subthreshold regions of temperature-dependent current-voltage (I–V) curves, which increase with decreased current for both kinds of diodes. However, the sensitivity of JBS under a specific current level is relatively higher than that of SBD even when considering the conduction area. This higher sensitivity is ascribed to the relatively larger ideality factor.\",\"PeriodicalId\":447,\"journal\":{\"name\":\"IEEE Sensors Journal\",\"volume\":\"25 6\",\"pages\":\"9401-9407\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2025-02-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Sensors Journal\",\"FirstCategoryId\":\"103\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10884690/\",\"RegionNum\":2,\"RegionCategory\":\"综合性期刊\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Sensors Journal","FirstCategoryId":"103","ListUrlMain":"https://ieeexplore.ieee.org/document/10884690/","RegionNum":2,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

采用选择性p-NiO/n-Ga2O3异质结制备了垂直Ga2O3结势垒肖特基（JBS）二极管，并将其应用于温度传感。与肖特基势垒二极管（SBD）相比，JBS器件具有更高的导通电压和更低的电流密度。SBD器件的室温肖特基势垒高度和理想因数分别为1.2 eV和1.2，而JBS器件的室温肖特基势垒高度和理想因数分别为1.2 eV和1.5。因此，JBS器件的异质结部分有助于相对较低的电流密度。二极管的灵敏度由温度相关的电流-电压（I-V）曲线的亚阈值区域得到，两种二极管的灵敏度都随着电流的减小而增加。然而，即使考虑到传导面积，JBS在特定电流水平下的灵敏度也相对高于SBD。这种较高的灵敏度归因于相对较大的理想因子。

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Temperature Sensitivity of Vertical Ga₂O₃ Junction Barrier Schottky Diode Using the p-NiO/n-Ga₂O₃ Heterojunction

A vertical Ga2O3 junction-barrier Schottky (JBS) diode is fabricated using selective p-NiO/n-Ga2O3 heterojunction and applied in temperature sensing. Compared with the Schottky barrier diode (SBD), the JBS device has a higher turn-on voltage and a lower current density. The room-temperature Schottky barrier height and ideality factor are 1.2 eV and 1.2 for the SBD device, whereas they are 1.2 eV and 1.5 for the JBS device, respectively. Therefore, the heterojunction parts of the JBS device contribute to the relatively lower current density. The sensitivities of diodes are obtained from the subthreshold regions of temperature-dependent current-voltage (I–V) curves, which increase with decreased current for both kinds of diodes. However, the sensitivity of JBS under a specific current level is relatively higher than that of SBD even when considering the conduction area. This higher sensitivity is ascribed to the relatively larger ideality factor.

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来源期刊

IEEE Sensors Journal 工程技术-工程：电子与电气

CiteScore

7.70

自引率

14.00%

发文量

2058

审稿时长

5.2 months

期刊介绍： The fields of interest of the IEEE Sensors Journal are the theory, design , fabrication, manufacturing and applications of devices for sensing and transducing physical, chemical and biological phenomena, with emphasis on the electronics and physics aspect of sensors and integrated sensors-actuators. IEEE Sensors Journal deals with the following: -Sensor Phenomenology, Modelling, and Evaluation -Sensor Materials, Processing, and Fabrication -Chemical and Gas Sensors -Microfluidics and Biosensors -Optical Sensors -Physical Sensors: Temperature, Mechanical, Magnetic, and others -Acoustic and Ultrasonic Sensors -Sensor Packaging -Sensor Networks -Sensor Applications -Sensor Systems: Signals, Processing, and Interfaces -Actuators and Sensor Power Systems -Sensor Signal Processing for high precision and stability (amplification, filtering, linearization, modulation/demodulation) and under harsh conditions (EMC, radiation, humidity, temperature); energy consumption/harvesting -Sensor Data Processing (soft computing with sensor data, e.g., pattern recognition, machine learning, evolutionary computation; sensor data fusion, processing of wave e.g., electromagnetic and acoustic; and non-wave, e.g., chemical, gravity, particle, thermal, radiative and non-radiative sensor data, detection, estimation and classification based on sensor data) -Sensors in Industrial Practice