90纳米(Bi) cmos毫米波低损耗宽带带通滤波器和滤波阻抗互感器的综合设计

IF 6.9 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Xiaolong Huang;Zheng Liu;Emir Ali Karahan;Kaushik Sengupta
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引用次数: 0

摘要

本文介绍了一种利用改进的切比雪夫函数设计具有多个(N)独立控制传输零点的通用宽带片上滤波器的快速滤波器合成方法。它消除了传统滤波器合成方法的带宽限制。提出了一套三种通用集总LC电路拓扑结构,以实现任意带宽、任意顺序和不同的N TZs分布。此外,我们还介绍了一种在集总LC电路合成过程中同时从电路两侧提取元件的创新方法,从而减少了累积的数值误差,提高了设计速度。利用所提出的电路拓扑和提取方法,成功合成了具有相同50-70 GHz通带但不同TZs分布的多个滤波器,以及30-90 GHz的超宽带滤波器。我们提出的方法也可以扩展到设计片上系统的滤波阻抗变压器,使用50 Ω接口超越传统的射频设计流程,并提供减少组件和最小化系统损耗的综合优势。利用提出的设计方法,我们制作了一个90 nm SiGe BiCMOS片上滤波器,该滤波器在59.16 GHz时具有1.5 dB的低插入损耗和34%的分数带宽,实现了迄今为止硅集成滤波器中最好的损耗性能之一。本研究为通用设计规范的低损耗片上滤波器设计方法做出了贡献,并提供了一种设计工具,可以实现高设计速度和期望的性能,使片上滤波器合成成为新兴无线技术的承诺。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Synthesized Design of Millimeter-Wave Low-Loss Wideband Bandpass Filter and Filtering Impedance Transformer in 90-nm (Bi)-CMOS Technology
This paper introduces a rapid filter synthesis method that utilizes the improved Chebyshev function to design versatile broadband on-chip filters with multiple (N) independently controlled transmission zeros (TZs). It eliminates the constraints of narrow bandwidth associated with traditional filter synthesis method. A set of three universal lumped LC circuit topologies are proposed to achieve arbitrary bandwidth, arbitrary order, and different distributions of N TZs. Additionally, we introduce an innovative approach to simultaneously extract components from both sides of the circuit during lumped LC circuit synthesis, which reduces accumulated numerical errors and improves the design speed. Several filters with the same 50–70 GHz passband but different TZs distributions, and an ultra-wideband filter from 30–90 GHz are successfully synthesized using the proposed circuit topologies and extraction method. Our proposed method can also be extended to design filtering impedance transformers for on-chip systems that surpasses the traditional RF design flow using 50 Ω interface and offers the combined benefits of component reduction and minimized system loss. Using the proposed design methodology, we fabricated a 90-nm SiGe BiCMOS on-chip filter which exhibits a low insertion loss of 1.5 dB at 59.16 GHz and a fractional bandwidth of 34%, achieving one of the best reported loss performances among silicon integrated filters to date. This research contributes to low-loss on-chip filter design methodology for universal design specifications and offers a design tool that can achieve high design speed and desired performance, enabling the promise of on-chip filter synthesis for emerging wireless technologies.
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来源期刊
CiteScore
10.70
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审稿时长
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