CeO2抛光粉的制备及其光学玻璃化学机械抛光性能与机理

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Wei Zhang, PeiWei Zhang, Yuan Wu, Xin Li, Xu Wang, Mitang Wang, Siqingaowa Jin, Wei Bi, Yan Zhao, Wei Zhou, Dongliang Zhang
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引用次数: 0

摘要

CeO2抛光粉广泛应用于硅基材料的化学机械抛光。本研究采用沉淀法在不同的煅烧温度下合成了亚微米、球形、无氟和掺氟的CeO2颗粒。采用激光粒度分析仪(LPSA)、扫描电子显微镜(SEM)、x射线衍射仪(XRD)、x射线光电子能谱(XPS)等测试手段获得了CeO2颗粒的粒径、形貌、结晶度和Ce3+含量等关键参数。结合K9光学玻璃的CMP实验,对其使用寿命和抛光性能进行了评价。结果表明,结晶度是最关键的因素,其中(111)晶面的作用尤为显著。氟能增强结晶度,促进晶粒生长;因此,氟掺杂可以在较低的煅烧温度(600℃)下改善粉体的结晶度,降低能耗。此外,适当的粒径、粗糙的表面形貌和颗粒的亲水性也有助于提高材料去除率。傅里叶变换红外光谱(FT-IR)证实了CMP过程中Ce-O-Si键合促进了玻璃的分解。XPS验证了Ce4+在CMP过程中可以还原成Ce3+, Ce3+的存在可以增强Ce-O-Si键合。最终,通过在ceo2 -玻璃界面形成Ce-O-Si键,玻璃主要以集总Q3 (Si2O52 -薄片)的形式被移除。本研究进一步细化了CMP过程中CeO2与玻璃的抛光机理,并在TOC图中进行了简洁的总结。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Preparation of CeO2 Polishing Powder and Its Performance and Mechanism for Chemical Mechanical Polishing of Optical Glass

Preparation of CeO2 Polishing Powder and Its Performance and Mechanism for Chemical Mechanical Polishing of Optical Glass
CeO2 polishing powder is extensively used in chemical mechanical polishing (CMP) applications on Si substrate materials. This study synthesized sub-micrometer, spherical, fluoride-free, and fluorine-doped CeO2 particles using the precipitation method at various calcination temperatures. Key parameters of the CeO2 particles, such as particle size, morphology, crystallinity, and Ce3+ content, were obtained using a laser particle size analyzer (LPSA), scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In conjunction with CMP experiments on K9 optical glass, the service life and polishing performance were evaluated. It was determined that crystallinity is the most critical factor, with a particularly pronounced role of the (111) crystal plane. Fluorine can enhance crystallinity and promote grain growth; hence, fluorine doping can improve the crystallinity of the powder at relatively low calcination temperatures (600 °C), reducing energy consumption. Additionally, appropriate particle size, rough surface morphology, and hydrophilicity of particles can also contribute to the enhancement of material removal rate (MRR). Fourier transform infrared spectroscopy (FT-IR) confirmed that Ce–O–Si bonding during the CMP process facilitated the disintegration of the glass. XPS verified that some Ce4+ can be reduced to Ce3+ during the CMP process, and the presence of Ce3+ can strengthen Ce–O–Si bonding. Ultimately, the glass is primarily removed in a lumped Q3 (Si2O52– sheet) form through the formation of Ce–O–Si bonds at the CeO2–glass interface. This study further refines the polishing mechanism of CeO2 with glass during the CMP process, succinctly summarized in the TOC graphic.
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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