单晶和多晶碳化硅键合的成本效益芯片制造

IF 4.3 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Szuyu Huang, Fachen Liu, Jiaxin Liu, Xiaoyue Gao, Zhenzhong Wang, Peng Gao
{"title":"单晶和多晶碳化硅键合的成本效益芯片制造","authors":"Szuyu Huang,&nbsp;Fachen Liu,&nbsp;Jiaxin Liu,&nbsp;Xiaoyue Gao,&nbsp;Zhenzhong Wang,&nbsp;Peng Gao","doi":"10.1002/admi.202400816","DOIUrl":null,"url":null,"abstract":"<p>High-quantity single-crystal silicon carbide (SiC) is widely used in power electronics due to its excellent breakdown electric field strength and high thermal conductivity. However, back grinding during the chip fabrication generally results in ≈70% of single-crystal SiC being wasted, leading to the high cost of SiC chips. In order to improve the utilization, single-crystal SiC on polycrystal SiC (SoP-SiC) is bonded. The challenge to achieve excellent bonding interfaces for such a system is the heterogeneous surface of polycrystals in which those grains with different orientations usually have different physical and chemical properties, making it difficult to achieve sufficiently smooth surfaces for bonding. Here, ion beam etching (IBE) is employed to activate the surface of polycrystal and single-crystal SiC and achieve high bonding strength (up to ≈20 MPa) after annealing in the atmosphere. Sub-nanometer-scale electron microscopy and energy spectroscopy analysis showing the IBE method can effectively inhibit the formation of silicon oxide at the bonding interface, which is expected to reduce the interface thermal resistance according to the phonon spectrum analysis. This study provides a novel method to fabricate single-polycrystal SiC junctions with high bonding strength and high thermal conductivity, which is valuable for the SiC industry.</p>","PeriodicalId":115,"journal":{"name":"Advanced Materials Interfaces","volume":"12 6","pages":""},"PeriodicalIF":4.3000,"publicationDate":"2024-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400816","citationCount":"0","resultStr":"{\"title\":\"Single-Crystal and Polycrystal SiC Bonding for Cost-effective Chip Fabrication\",\"authors\":\"Szuyu Huang,&nbsp;Fachen Liu,&nbsp;Jiaxin Liu,&nbsp;Xiaoyue Gao,&nbsp;Zhenzhong Wang,&nbsp;Peng Gao\",\"doi\":\"10.1002/admi.202400816\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>High-quantity single-crystal silicon carbide (SiC) is widely used in power electronics due to its excellent breakdown electric field strength and high thermal conductivity. However, back grinding during the chip fabrication generally results in ≈70% of single-crystal SiC being wasted, leading to the high cost of SiC chips. In order to improve the utilization, single-crystal SiC on polycrystal SiC (SoP-SiC) is bonded. The challenge to achieve excellent bonding interfaces for such a system is the heterogeneous surface of polycrystals in which those grains with different orientations usually have different physical and chemical properties, making it difficult to achieve sufficiently smooth surfaces for bonding. Here, ion beam etching (IBE) is employed to activate the surface of polycrystal and single-crystal SiC and achieve high bonding strength (up to ≈20 MPa) after annealing in the atmosphere. Sub-nanometer-scale electron microscopy and energy spectroscopy analysis showing the IBE method can effectively inhibit the formation of silicon oxide at the bonding interface, which is expected to reduce the interface thermal resistance according to the phonon spectrum analysis. This study provides a novel method to fabricate single-polycrystal SiC junctions with high bonding strength and high thermal conductivity, which is valuable for the SiC industry.</p>\",\"PeriodicalId\":115,\"journal\":{\"name\":\"Advanced Materials Interfaces\",\"volume\":\"12 6\",\"pages\":\"\"},\"PeriodicalIF\":4.3000,\"publicationDate\":\"2024-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/admi.202400816\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/admi.202400816\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials Interfaces","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/admi.202400816","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

单晶碳化硅(SiC)由于具有优异的击穿电场强度和高导热性,在电力电子领域得到了广泛的应用。然而,在芯片制造过程中,反磨通常会导致约70%的单晶SiC被浪费,从而导致SiC芯片的高成本。为了提高单晶SiC的利用率,在多晶SiC (SoP-SiC)上进行了键合。为这种系统实现优异的键合界面的挑战是多晶的非均质表面,其中具有不同取向的晶粒通常具有不同的物理和化学性质,使得难以获得足够光滑的表面以进行键合。本文采用离子束蚀刻(IBE)激活多晶和单晶SiC的表面,并在大气中退火后获得较高的结合强度(高达≈20 MPa)。亚纳米尺度的电子显微镜和能谱分析表明,IBE方法可以有效抑制键合界面氧化硅的形成,根据声子谱分析,有望降低界面热阻。本研究为制备高结合强度、高导热的单晶SiC结提供了一种新的方法,对SiC工业具有重要的应用价值。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Single-Crystal and Polycrystal SiC Bonding for Cost-effective Chip Fabrication

Single-Crystal and Polycrystal SiC Bonding for Cost-effective Chip Fabrication

High-quantity single-crystal silicon carbide (SiC) is widely used in power electronics due to its excellent breakdown electric field strength and high thermal conductivity. However, back grinding during the chip fabrication generally results in ≈70% of single-crystal SiC being wasted, leading to the high cost of SiC chips. In order to improve the utilization, single-crystal SiC on polycrystal SiC (SoP-SiC) is bonded. The challenge to achieve excellent bonding interfaces for such a system is the heterogeneous surface of polycrystals in which those grains with different orientations usually have different physical and chemical properties, making it difficult to achieve sufficiently smooth surfaces for bonding. Here, ion beam etching (IBE) is employed to activate the surface of polycrystal and single-crystal SiC and achieve high bonding strength (up to ≈20 MPa) after annealing in the atmosphere. Sub-nanometer-scale electron microscopy and energy spectroscopy analysis showing the IBE method can effectively inhibit the formation of silicon oxide at the bonding interface, which is expected to reduce the interface thermal resistance according to the phonon spectrum analysis. This study provides a novel method to fabricate single-polycrystal SiC junctions with high bonding strength and high thermal conductivity, which is valuable for the SiC industry.

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来源期刊
Advanced Materials Interfaces
Advanced Materials Interfaces CHEMISTRY, MULTIDISCIPLINARY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
8.40
自引率
5.60%
发文量
1174
审稿时长
1.3 months
期刊介绍: Advanced Materials Interfaces publishes top-level research on interface technologies and effects. Considering any interface formed between solids, liquids, and gases, the journal ensures an interdisciplinary blend of physics, chemistry, materials science, and life sciences. Advanced Materials Interfaces was launched in 2014 and received an Impact Factor of 4.834 in 2018. The scope of Advanced Materials Interfaces is dedicated to interfaces and surfaces that play an essential role in virtually all materials and devices. Physics, chemistry, materials science and life sciences blend to encourage new, cross-pollinating ideas, which will drive forward our understanding of the processes at the interface. Advanced Materials Interfaces covers all topics in interface-related research: Oil / water separation, Applications of nanostructured materials, 2D materials and heterostructures, Surfaces and interfaces in organic electronic devices, Catalysis and membranes, Self-assembly and nanopatterned surfaces, Composite and coating materials, Biointerfaces for technical and medical applications. Advanced Materials Interfaces provides a forum for topics on surface and interface science with a wide choice of formats: Reviews, Full Papers, and Communications, as well as Progress Reports and Research News.
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