表面覆碳的铜硅合金阳极材料的热处理改性

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Chuanbin Tu, Guojun Xu, Jun Chen, Chenxin Jin, Haojun Gong, Ji Liu, Fugen Sun, Yong Li, Lang Zhou, Zhihao Yue
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引用次数: 0

摘要

本文采用化学沉积的方法在硅(Si)表面沉积了铜(Cu)纳米颗粒。然后将改性的Si/C颗粒与导电剂和粘合剂混合制备电极。最后,采用快速热处理(RTP)对电极进行处理,一步得到界面Cu-Si合金和均匀碳包覆Si阳极材料(Si/Cu3Si/Cu@C)。在0.2 C (1 C = 4.2 A g−1)下循环100次后,其可逆比容量仍为1362 mAh g−1,比硅电极的可逆比容量高997 mAh g−1。通过倍增器测试,Si/Cu3Si/Cu@C复合材料在2℃时的比容量保持在604 mAh g−1。Si/Cu3Si/Cu@C复合材料优异的电化学性能主要归功于纳米铜颗粒和碳层的双重缓冲介质。首先,硅表面铜颗粒的存在可以提高硅的整体电导率和体积膨胀系数,从而克服了由于电阻过大导致电极容量快速衰减的问题。其次,表面碳层可以进一步缓解锂嵌入和脱嵌过程中的机械应力,有效隔离活性物质与集流体,保证活性粒子的良好电接触和表面SEI膜的稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Thermal treatment modification of copper–silicon alloy anode material with carbon coating on the surface

In this paper, copper (Cu) nanoparticles is deposited on the surface of silicon (Si) particles by electroless deposition. Then the electrode is prepared by mixing the modified Si/C particles with conductive agents and adhesives. Finally, rapid thermal process (RTP) is used to treat the electrode, so that interfacial Cu–Si alloyed and uniform carbon-coated Si anode materials (Si/Cu3Si/Cu@C) are obtained by one step. The reversible specific capacity remains 1362 mAh g−1 after 100 cycles at 0.2 C (1 C = 4.2 A g−1), which is 997 mAh g−1 higher than that of Si electrode. Through the multiplier test, the specific capacity of Si/Cu3Si/Cu@C holds on 604 mAh g−1 at 2 C. The excellent electrochemical performance of Si/Cu3Si/Cu@C composite materials is mainly attributed to the dual buffering media of nano-copper particles and carbon layers. Firstly, the presence of copper particles on the silicon surface can improve the overall conductivity and the volume expansion coefficient of silicon, thereby overcoming the rapid capacity decay of the electrode caused by excessive resistance. Secondly, the surface carbon layer can further alleviate the mechanical stress during the lithium intercalation and deintercalation process, effectively isolate the active material from the current collector, and ensure good electrical contact of the active particles and the stability of the surface SEI film.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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