固体氚源GaAs基倍他伏打微电池结构设计与性能优化

IF 2.8 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Shiping Wei, Yuan Hu
{"title":"固体氚源GaAs基倍他伏打微电池结构设计与性能优化","authors":"Shiping Wei,&nbsp;Yuan Hu","doi":"10.1007/s00339-025-08400-6","DOIUrl":null,"url":null,"abstract":"<div><p>Betavoltaic microbatteries have shown a great promising potential in military and commercial applications due to their attractive characteristics of easy integration, long lifetime and superior adaptability. However, improvement of both energy conversion efficiency and output power has been a big challenge. In this paper, we proposed a GaAs based betavoltaic microbattery using solid-state tritium source. The influences of structural parameters of solid-state tritium source and GaAs semiconductor transducer, the self-absorption and surface recombination effects and doping concentrations on the output performance of the betavoltaic microbattery were analyzed by the Monte Carlo simulation and Matlab code. The electrical performance of the betavoltaic microbattery was evaluated and optimized. The simulation results showed that under an illumination of 0.2 Ci titanium tritide (TiT<sub>2</sub>) film, the betavoltaic microbattery displayed a maximum output power of 39.8 nW and energy conversion efficiency of 0.58% with an open-circuit voltage of 0.62 V, a short-circuit current of 76.9 nA, and a high filling factor of 0.83. It is noted that the thickness of solid-state tritium source and reverse saturation current of GaAs semiconductor transducer have important influences on output performance and should be reasonably reduced.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 4","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Structure design and performance optimization of GaAs based betavoltaic microbattery using solid-state tritium source\",\"authors\":\"Shiping Wei,&nbsp;Yuan Hu\",\"doi\":\"10.1007/s00339-025-08400-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Betavoltaic microbatteries have shown a great promising potential in military and commercial applications due to their attractive characteristics of easy integration, long lifetime and superior adaptability. However, improvement of both energy conversion efficiency and output power has been a big challenge. In this paper, we proposed a GaAs based betavoltaic microbattery using solid-state tritium source. The influences of structural parameters of solid-state tritium source and GaAs semiconductor transducer, the self-absorption and surface recombination effects and doping concentrations on the output performance of the betavoltaic microbattery were analyzed by the Monte Carlo simulation and Matlab code. The electrical performance of the betavoltaic microbattery was evaluated and optimized. The simulation results showed that under an illumination of 0.2 Ci titanium tritide (TiT<sub>2</sub>) film, the betavoltaic microbattery displayed a maximum output power of 39.8 nW and energy conversion efficiency of 0.58% with an open-circuit voltage of 0.62 V, a short-circuit current of 76.9 nA, and a high filling factor of 0.83. It is noted that the thickness of solid-state tritium source and reverse saturation current of GaAs semiconductor transducer have important influences on output performance and should be reasonably reduced.</p></div>\",\"PeriodicalId\":473,\"journal\":{\"name\":\"Applied Physics A\",\"volume\":\"131 4\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics A\",\"FirstCategoryId\":\"4\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s00339-025-08400-6\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics A","FirstCategoryId":"4","ListUrlMain":"https://link.springer.com/article/10.1007/s00339-025-08400-6","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

倍他伏打微电池具有易于集成、寿命长、适应性强等优点,在军事和商业应用中显示出巨大的潜力。然而,提高能量转换效率和输出功率一直是一个巨大的挑战。在本文中,我们提出了一种基于砷化镓的固态氚源倍他伏打微电池。通过蒙特卡罗仿真和Matlab代码分析了固态氚源和GaAs半导体换能器的结构参数、自吸收和表面复合效应以及掺杂浓度对倍他伏打微电池输出性能的影响。对倍他伏打微电池的电性能进行了评价和优化。仿真结果表明,在0.2 Ci钛三酸盐(TiT2)薄膜照明下,倍他伏打微电池的最大输出功率为39.8 nW,能量转换效率为0.58%,开路电压为0.62 V,短路电流为76.9 nA,填充系数为0.83。指出固态氚源的厚度和GaAs半导体换能器的反向饱和电流对输出性能有重要影响,应合理减小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structure design and performance optimization of GaAs based betavoltaic microbattery using solid-state tritium source

Betavoltaic microbatteries have shown a great promising potential in military and commercial applications due to their attractive characteristics of easy integration, long lifetime and superior adaptability. However, improvement of both energy conversion efficiency and output power has been a big challenge. In this paper, we proposed a GaAs based betavoltaic microbattery using solid-state tritium source. The influences of structural parameters of solid-state tritium source and GaAs semiconductor transducer, the self-absorption and surface recombination effects and doping concentrations on the output performance of the betavoltaic microbattery were analyzed by the Monte Carlo simulation and Matlab code. The electrical performance of the betavoltaic microbattery was evaluated and optimized. The simulation results showed that under an illumination of 0.2 Ci titanium tritide (TiT2) film, the betavoltaic microbattery displayed a maximum output power of 39.8 nW and energy conversion efficiency of 0.58% with an open-circuit voltage of 0.62 V, a short-circuit current of 76.9 nA, and a high filling factor of 0.83. It is noted that the thickness of solid-state tritium source and reverse saturation current of GaAs semiconductor transducer have important influences on output performance and should be reasonably reduced.

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来源期刊
Applied Physics A
Applied Physics A 工程技术-材料科学:综合
CiteScore
4.80
自引率
7.40%
发文量
964
审稿时长
38 days
期刊介绍: Applied Physics A publishes experimental and theoretical investigations in applied physics as regular articles, rapid communications, and invited papers. The distinguished 30-member Board of Editors reflects the interdisciplinary approach of the journal and ensures the highest quality of peer review.
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