基于通用逻辑门的全光硅板波导的实现

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yash Yadav, Yogita Kalra
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引用次数: 0

摘要

本文提出了基于SSW的全光NAND和NOR逻辑门的设计与实现。该设计利用了硅在光通信波长(1.55 μ m)处的高折射率特性,确保了低临界角和增强了平板波导的光约束。这些门根据输入信号的干扰而工作。利用FDTD软件MEEP对设计的NAND和NOR逻辑门在TE和TM模式下的性能进行了优化。NAND逻辑门在TE模式下的对比度为34.79 dB,调制深度为97.11%;在TM模式下的对比度为38.42 dB,调制深度为97.11%。该NOR逻辑门在TE模式下的对比度为40.91 dB,调制深度为98.34%;在TM模式下的对比度为38.42 dB,调制深度为98.60%。所设计的通用逻辑门具有高速性能,传播延迟时间以飞秒为单位测量。所提出的门具有更高的性能指标,显着优于现有的光逻辑门设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Realization of all optical silicon slab waveguide based universal logic gates

Realization of all optical silicon slab waveguide based universal logic gates

In this paper the design and implementation of SSW based all-optical NAND and NOR logic gates have been proposed. The design leverages the properties of silicon's high refractive index at optical communication wavelengths (1.55 µm), which ensures low critical angles and enhanced optical confinement in slab waveguides. The gates operate on the interference of the input signals. The designed NAND and NOR logic gates have been optimized for performance in both TE and TM modes using FDTD software MEEP. The NAND logic gate exhibits a contrast ratio of 34.79 dB with a modulation depth of 97.11% for TE mode and 38.42 dB with a modulation depth of 97.11% for TM mode. The NOR logic gate exhibits a contrast ratio of 40.91 dB with a modulation depth of 98.34% for TE mode and 38.42 dB with a modulation depth of 98.60% for TM mode. The designed universal logic gates exhibit high-speed performance, with propagation delay times measured in femtoseconds. The proposed gates exhibit higher performance metrics significantly outperforming existing optical logic gate designs.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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