{"title":"基于通用逻辑门的全光硅板波导的实现","authors":"Yash Yadav, Yogita Kalra","doi":"10.1007/s11082-025-08130-2","DOIUrl":null,"url":null,"abstract":"<div><p>In this paper the design and implementation of SSW based all-optical NAND and NOR logic gates have been proposed. The design leverages the properties of silicon's high refractive index at optical communication wavelengths (1.55 µm), which ensures low critical angles and enhanced optical confinement in slab waveguides. The gates operate on the interference of the input signals. The designed NAND and NOR logic gates have been optimized for performance in both TE and TM modes using FDTD software MEEP. The NAND logic gate exhibits a contrast ratio of 34.79 dB with a modulation depth of 97.11% for TE mode and 38.42 dB with a modulation depth of 97.11% for TM mode. The NOR logic gate exhibits a contrast ratio of 40.91 dB with a modulation depth of 98.34% for TE mode and 38.42 dB with a modulation depth of 98.60% for TM mode. The designed universal logic gates exhibit high-speed performance, with propagation delay times measured in femtoseconds. The proposed gates exhibit higher performance metrics significantly outperforming existing optical logic gate designs.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Realization of all optical silicon slab waveguide based universal logic gates\",\"authors\":\"Yash Yadav, Yogita Kalra\",\"doi\":\"10.1007/s11082-025-08130-2\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this paper the design and implementation of SSW based all-optical NAND and NOR logic gates have been proposed. The design leverages the properties of silicon's high refractive index at optical communication wavelengths (1.55 µm), which ensures low critical angles and enhanced optical confinement in slab waveguides. The gates operate on the interference of the input signals. The designed NAND and NOR logic gates have been optimized for performance in both TE and TM modes using FDTD software MEEP. The NAND logic gate exhibits a contrast ratio of 34.79 dB with a modulation depth of 97.11% for TE mode and 38.42 dB with a modulation depth of 97.11% for TM mode. The NOR logic gate exhibits a contrast ratio of 40.91 dB with a modulation depth of 98.34% for TE mode and 38.42 dB with a modulation depth of 98.60% for TM mode. The designed universal logic gates exhibit high-speed performance, with propagation delay times measured in femtoseconds. The proposed gates exhibit higher performance metrics significantly outperforming existing optical logic gate designs.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"57 4\",\"pages\":\"\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-025-08130-2\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08130-2","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Realization of all optical silicon slab waveguide based universal logic gates
In this paper the design and implementation of SSW based all-optical NAND and NOR logic gates have been proposed. The design leverages the properties of silicon's high refractive index at optical communication wavelengths (1.55 µm), which ensures low critical angles and enhanced optical confinement in slab waveguides. The gates operate on the interference of the input signals. The designed NAND and NOR logic gates have been optimized for performance in both TE and TM modes using FDTD software MEEP. The NAND logic gate exhibits a contrast ratio of 34.79 dB with a modulation depth of 97.11% for TE mode and 38.42 dB with a modulation depth of 97.11% for TM mode. The NOR logic gate exhibits a contrast ratio of 40.91 dB with a modulation depth of 98.34% for TE mode and 38.42 dB with a modulation depth of 98.60% for TM mode. The designed universal logic gates exhibit high-speed performance, with propagation delay times measured in femtoseconds. The proposed gates exhibit higher performance metrics significantly outperforming existing optical logic gate designs.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.