XYGe (X = Li, K)半heusler化合物在不同交换相关泛函下的光电和热电性质的第一性原理研究

IF 4.6 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Dinesh Kumar , Prakash Chand , Lalit Mohan
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引用次数: 0

摘要

在本研究中,利用广义梯度近似(GGA-PBE)、局部密度近似(LDA)、Wu - Cohen (WC)和TB-mBJ交换电位,深入研究了XYGe (X = Li, K)半heusler化合物的结构、电子、热力学、弹性、光学和热电性质。利用Wien2k封装的全势-线性化增广平面波(FP-LAPW)方法中的密度泛函理论(DFT)来研究这些性质。带结构和DOS结果证实了化合物的半导体性质。热力学和弹性研究结果表明,该化合物具有热稳定性和机械稳定性。测试了各种光学性质,结果表明该材料是光电器件的一个有前途的选择。研究了各种热电性质。在300 K温度下,LDA法下KYGe的ZT值为3.28,TB-mBJ法下LiYGe的ZT值为3.34。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First-principle investigation of optoelectronic and thermoelectric properties in XYGe (X = Li, K) half-Heusler compounds at different exchange correlation functional
In this study, the structural, electronic, thermodynamic, elastic, optical, and thermoelectric properties of XYGe (X = Li, K) half-Heusler compounds are thoroughly investigated using generalized gradient approximation (GGA-PBE), local density approximation (LDA), Wu – Cohen (WC), and TB-mBJ exchange potentials. The density functional theory (DFT) inside the full potential − linearized augmented plane wave (FP-LAPW) approach encapsulated in Wien2k is used to investigate these properties. The band structure and DOS results confirm semiconducting nature of the compounds. The thermodynamic and elastic research findings show that the compounds are thermally and mechanically stable. The various optical properties are examined, and the results obtained indicate that the materials are a promising option for optoelectronic devices. The various thermoelectric properties are also investigated. The figure of merit (ZT) of 3.28 for KYGe under LDA approach and 3.34 for LiYGe under TB-mBJ approach were obtained at 300 K temperature.
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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