Xianglong Li, Zengxu Xu, Songbai Hu, Mingqiang Gu, Yuanmin Zhu, Qi Liu, Yihao Yang, Mao Ye, Jingxuan Li and Lang Chen*,
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Ferroelectricity in Orthorhombic Zirconia Thin Films
Ferroelectric fluorite oxides such as hafnium (HfO2)-based materials are one of the most promising candidates for future large-scale integrated circuits (ICs), while zirconia (ZrO2)-based fluorite materials, which have the same structure as HfO2 and more abundant resources and lower cost of raw materials, are usually thought to be anti- or ferroelectric-like. Here, we report a remanent polarization (Pr) of ∼15 μC/cm2 in orthorhombic ZrO2 thin films at 77 K. This ferroelectricity arises from an electric field-induced antiferroelectric to ferroelectric phase transition, which is particularly noticeable at 77 K. Our work reveals the ferroelectricity in ZrO2 thin films and offers a new pathway to understand the origin of ferroelectricity in fluorite oxides.
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Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
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Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.
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