Doping Engineering Strategy for Boosting the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral range have exhibited a promising future in physical sterilization. However, the low Mg doping efficiency hinders the further development of high-performance AlGaN-based DUV LEDs. Herein, we demonstrate the performance of 279 nm AlGaN-based DUV LEDs beyond the state-of-the-art by exploiting the periodic Mg doping strategy. In contrast to continuous doping, periodic doping can improve the crystalline quality and the Mg distribution in the p-Al_0.66Ga_0.34N layer, thereby achieving higher doping efficiency of Mg dopants with lower doping concentration. As a result, after forming the periodic-doping electron-blocking layer (EBL), the light output power (LOP) of the DUV LED is improved by 92.4% at 300 mA in contrast to its referred counterpart with continuous-doping EBL. Our work is able to provide a new horizon in the development of highly efficient AlGaN-based DUV emitters.