Time-dependent behaviour of dielectric properties of Co/Zn-doped PVA interlayered Schottky structures after gamma-ray exposure

This study examines the radiation-dependent dielectric properties of an Au/(Co/Zn)-doped PVA/n-Si MPS-type Schottky structure (SS). Capacitance/conductance-voltage (C/(G/ω)−V) measurements were taken at 1 MHz frequency before and after 22 kGy radiation application on the 1st, 3rd, 5th, 10th, 20th, and 30th days. The dielectric constant (ε') and dielectric loss (ε'') parameters were calculated using the impedance/admittance spectroscopy method. The results indicate that the most significant difference occurred on the first day after irradiation. In the subsequent days, particularly on the 30th day, the values closely approached those of the unirradiated sample (U.S). Similar results were obtained for loss tangent (tan(δ)), ac-conductivity (σ_ac), and the complex electric modulus (M*), including both the real (M') and imaginary (M'') parts. The results indicate that the sample is mainly affected by the transient effects of radiation, but there are also permanent radiation effects present. The results show that the polarisation mechanism, which is a crucial factor in dielectric properties, can be explained by the Maxwell–Wagner dispersion model based on Koop’s theory. The study concluded that the Au/(Co/Zn)-doped PVA/n-Si MPS-type SS can be safely and accurately used as a rectifier contact even after exposure to 22 kGy radiation.