A. M. Strel’chuk, V. V. Kozlovski, G. A. Oganesyan
{"title":"低剂量辐照及后续等时退火对碳化硅基表面势垒二极管电流-电压特性的影响","authors":"A. M. Strel’chuk, V. V. Kozlovski, G. A. Oganesyan","doi":"10.1134/S1027451024702239","DOIUrl":null,"url":null,"abstract":"<p>A study was conducted on the effect of low-dose (~10<sup>16</sup> cm<sup>–2</sup>) irradiation with electrons with an energy of 0.9 MeV and subsequent isochronous annealing at temperatures up to 550°C on the current-voltage characteristics of commercial rectifier diodes based on 4H-SiC with a doping level of (3–7) × 10<sup>15</sup> cm<sup>–3</sup>. The previously established effect of increasing series resistance <i>R</i><sub>s</sub> of diodes under irradiation, the numerical value of the threshold dose of irradiation, and the effect of the spread of the value of <i>R</i><sub>s</sub> of identical diodes at the same dose of radiation have been confirmed. For the first time, isochronous annealing (without passing current during annealing) was performed at temperatures up to 550°C, significantly exceeding the maximum operating temperatures of the diodes. It has been shown that starting from temperatures ≥200°C the annealing of defects is observed, which is expressed in a decrease in the value of <i>R</i><sub>s</sub> at room temperature down to pre-irradiation values. Annealing also leads to a decrease in the reverse breakdown current.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 1 supplement","pages":"S321 - S327"},"PeriodicalIF":0.5000,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Low-Dose Irradiation and Subsequent Isochronous Annealing on the Current-Voltage Characteristics of Silicon Carbide-Based Surface-Barrier Diodes\",\"authors\":\"A. M. Strel’chuk, V. V. Kozlovski, G. A. Oganesyan\",\"doi\":\"10.1134/S1027451024702239\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>A study was conducted on the effect of low-dose (~10<sup>16</sup> cm<sup>–2</sup>) irradiation with electrons with an energy of 0.9 MeV and subsequent isochronous annealing at temperatures up to 550°C on the current-voltage characteristics of commercial rectifier diodes based on 4H-SiC with a doping level of (3–7) × 10<sup>15</sup> cm<sup>–3</sup>. The previously established effect of increasing series resistance <i>R</i><sub>s</sub> of diodes under irradiation, the numerical value of the threshold dose of irradiation, and the effect of the spread of the value of <i>R</i><sub>s</sub> of identical diodes at the same dose of radiation have been confirmed. For the first time, isochronous annealing (without passing current during annealing) was performed at temperatures up to 550°C, significantly exceeding the maximum operating temperatures of the diodes. It has been shown that starting from temperatures ≥200°C the annealing of defects is observed, which is expressed in a decrease in the value of <i>R</i><sub>s</sub> at room temperature down to pre-irradiation values. Annealing also leads to a decrease in the reverse breakdown current.</p>\",\"PeriodicalId\":671,\"journal\":{\"name\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"volume\":\"18 1 supplement\",\"pages\":\"S321 - S327\"},\"PeriodicalIF\":0.5000,\"publicationDate\":\"2025-03-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1027451024702239\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S1027451024702239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Effect of Low-Dose Irradiation and Subsequent Isochronous Annealing on the Current-Voltage Characteristics of Silicon Carbide-Based Surface-Barrier Diodes
A study was conducted on the effect of low-dose (~1016 cm–2) irradiation with electrons with an energy of 0.9 MeV and subsequent isochronous annealing at temperatures up to 550°C on the current-voltage characteristics of commercial rectifier diodes based on 4H-SiC with a doping level of (3–7) × 1015 cm–3. The previously established effect of increasing series resistance Rs of diodes under irradiation, the numerical value of the threshold dose of irradiation, and the effect of the spread of the value of Rs of identical diodes at the same dose of radiation have been confirmed. For the first time, isochronous annealing (without passing current during annealing) was performed at temperatures up to 550°C, significantly exceeding the maximum operating temperatures of the diodes. It has been shown that starting from temperatures ≥200°C the annealing of defects is observed, which is expressed in a decrease in the value of Rs at room temperature down to pre-irradiation values. Annealing also leads to a decrease in the reverse breakdown current.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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