Rafia Anar , Usman Saeed , Hafiz Tauqeer Ali , S. Nazir
{"title":"Electron-doping induced multiferroicity and superior transport properties of PbTiO3","authors":"Rafia Anar , Usman Saeed , Hafiz Tauqeer Ali , S. Nazir","doi":"10.1016/j.mseb.2025.118209","DOIUrl":null,"url":null,"abstract":"<div><div>Using <em>ab-initio</em> methods, 5<em>d</em>-transition metals (TM) = Re-/Os-/Ir-doping effects on the various aspects of the PbTiO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span> (PTO) perovskite oxide (PO) are studied. Our results revealed higher/lower electrical/thermal conductivity, resulting in a superior figure of merit of 0.79/0.75/0.79 in the pristine/Re-/Ir@Ti-doped structure at 300 K. A non-magnetic insulator state is found in the pristine one exhibits a high polarization (P) of 88 <span><math><mi>μ</mi></math></span>Ccm<sup>−2</sup>. Conversely, the Re-/Os-/Ir@Ti-doped system becomes a ferromagnetic semiconductor holding an <span><math><msub><mrow><mi>E</mi></mrow><mrow><mi>g</mi></mrow></msub></math></span> of 0.358/0.447/0.643 eV with a total magnetic moment of 2.90/1.93/0.92 <span><math><msub><mrow><mi>μ</mi></mrow><mrow><mi>B</mi></mrow></msub></math></span> and partial spin moment of 1.43/1.05/0.49 <span><math><msub><mrow><mi>μ</mi></mrow><mrow><mi>B</mi></mrow></msub></math></span> having + 4(5<span><math><msup><mrow><mi>d</mi></mrow><mrow><mn>3</mn></mrow></msup></math></span>)/+ 4(5<span><math><msup><mrow><mi>d</mi></mrow><mrow><mn>4</mn></mrow></msup></math></span>)/+ 4(5<span><math><msup><mrow><mi>d</mi></mrow><mrow><mn>5</mn></mrow></msup></math></span>) states. Notably, TM doping reduces octahedral distortions, leading to a decrease in P of 48/53/52 <span><math><mi>μ</mi></math></span>Ccm<sup>−2</sup> in the Re-/Os-/Ir@Ti-doped motif and Curie temperature of 220/195/177 K.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"317 ","pages":"Article 118209"},"PeriodicalIF":3.9000,"publicationDate":"2025-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725002326","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Electron-doping induced multiferroicity and superior transport properties of PbTiO3
Using ab-initio methods, 5d-transition metals (TM) = Re-/Os-/Ir-doping effects on the various aspects of the PbTiO (PTO) perovskite oxide (PO) are studied. Our results revealed higher/lower electrical/thermal conductivity, resulting in a superior figure of merit of 0.79/0.75/0.79 in the pristine/Re-/Ir@Ti-doped structure at 300 K. A non-magnetic insulator state is found in the pristine one exhibits a high polarization (P) of 88 Ccm−2. Conversely, the Re-/Os-/Ir@Ti-doped system becomes a ferromagnetic semiconductor holding an of 0.358/0.447/0.643 eV with a total magnetic moment of 2.90/1.93/0.92 and partial spin moment of 1.43/1.05/0.49 having + 4(5)/+ 4(5)/+ 4(5) states. Notably, TM doping reduces octahedral distortions, leading to a decrease in P of 48/53/52 Ccm−2 in the Re-/Os-/Ir@Ti-doped motif and Curie temperature of 220/195/177 K.
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The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.