Zhiqiang Zhu, Lu Cheng, Xiaoguang Xu, Kangkang Meng, Jingyan Zhang, Xiao Deng, Tao Zhu, Hualiang Lv, Renchao Che, Dingfu Shao, Delin Zhang, Yong Wu, Gang Zhang, Yong Jiang
{"title":"金属反铁磁体中轨道角动量关联电荷与自旋转换","authors":"Zhiqiang Zhu, Lu Cheng, Xiaoguang Xu, Kangkang Meng, Jingyan Zhang, Xiao Deng, Tao Zhu, Hualiang Lv, Renchao Che, Dingfu Shao, Delin Zhang, Yong Wu, Gang Zhang, Yong Jiang","doi":"10.1002/adma.202418264","DOIUrl":null,"url":null,"abstract":"<p>Current-induced spin-orbit torque (SOT) allows efficient electrical manipulation on magnetization in spintronic devices. Maximizing the SOT efficiency is a key goal that is pursued via increasing the net spin generation and accumulation. However, spin transport in antiferromagnets is seriously restricted due to the strong antiferromagnetic coupling, which blocks the development of antiferromagnetic-based devices. Here, a significant enhancement of SOT efficiency in Ir<sub>20</sub>Mn<sub>80</sub> (IrMn)-based heterostructure associated with the orbital effect of naturally oxidized Cu (Cu*) bottom layer is reported. Considering the weak spin–orbit coupling of Cu*, the enhancement results from an orbital current generated from charge current at the Cu*/IrMn interface that contributes to spin current in the IrMn layer due to the strong spin–orbit coupling. The SOT efficiency variation with IrMn thickness reveals the process of orbital angular momentum (OAM) transportation and conversion. Moreover, the contribution of orbital current is verified by the critical current density decreasing of SOT-driven magnetization switching in Cu*/IrMn/[Co/Pt]<sub>3</sub> heterostructure. This study opens a path to design high-efficient SOT-based spintronic devices combining the advantages of OAM and metallic antiferromagnets.</p>","PeriodicalId":114,"journal":{"name":"Advanced Materials","volume":"37 17","pages":""},"PeriodicalIF":26.8000,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Orbital Angular Momentum Correlated Charge to Spin Conversion in Metallic Antiferromagnet\",\"authors\":\"Zhiqiang Zhu, Lu Cheng, Xiaoguang Xu, Kangkang Meng, Jingyan Zhang, Xiao Deng, Tao Zhu, Hualiang Lv, Renchao Che, Dingfu Shao, Delin Zhang, Yong Wu, Gang Zhang, Yong Jiang\",\"doi\":\"10.1002/adma.202418264\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Current-induced spin-orbit torque (SOT) allows efficient electrical manipulation on magnetization in spintronic devices. Maximizing the SOT efficiency is a key goal that is pursued via increasing the net spin generation and accumulation. However, spin transport in antiferromagnets is seriously restricted due to the strong antiferromagnetic coupling, which blocks the development of antiferromagnetic-based devices. Here, a significant enhancement of SOT efficiency in Ir<sub>20</sub>Mn<sub>80</sub> (IrMn)-based heterostructure associated with the orbital effect of naturally oxidized Cu (Cu*) bottom layer is reported. Considering the weak spin–orbit coupling of Cu*, the enhancement results from an orbital current generated from charge current at the Cu*/IrMn interface that contributes to spin current in the IrMn layer due to the strong spin–orbit coupling. The SOT efficiency variation with IrMn thickness reveals the process of orbital angular momentum (OAM) transportation and conversion. Moreover, the contribution of orbital current is verified by the critical current density decreasing of SOT-driven magnetization switching in Cu*/IrMn/[Co/Pt]<sub>3</sub> heterostructure. This study opens a path to design high-efficient SOT-based spintronic devices combining the advantages of OAM and metallic antiferromagnets.</p>\",\"PeriodicalId\":114,\"journal\":{\"name\":\"Advanced Materials\",\"volume\":\"37 17\",\"pages\":\"\"},\"PeriodicalIF\":26.8000,\"publicationDate\":\"2025-03-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/adma.202418264\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adma.202418264","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Orbital Angular Momentum Correlated Charge to Spin Conversion in Metallic Antiferromagnet
Current-induced spin-orbit torque (SOT) allows efficient electrical manipulation on magnetization in spintronic devices. Maximizing the SOT efficiency is a key goal that is pursued via increasing the net spin generation and accumulation. However, spin transport in antiferromagnets is seriously restricted due to the strong antiferromagnetic coupling, which blocks the development of antiferromagnetic-based devices. Here, a significant enhancement of SOT efficiency in Ir20Mn80 (IrMn)-based heterostructure associated with the orbital effect of naturally oxidized Cu (Cu*) bottom layer is reported. Considering the weak spin–orbit coupling of Cu*, the enhancement results from an orbital current generated from charge current at the Cu*/IrMn interface that contributes to spin current in the IrMn layer due to the strong spin–orbit coupling. The SOT efficiency variation with IrMn thickness reveals the process of orbital angular momentum (OAM) transportation and conversion. Moreover, the contribution of orbital current is verified by the critical current density decreasing of SOT-driven magnetization switching in Cu*/IrMn/[Co/Pt]3 heterostructure. This study opens a path to design high-efficient SOT-based spintronic devices combining the advantages of OAM and metallic antiferromagnets.
期刊介绍:
Advanced Materials, one of the world's most prestigious journals and the foundation of the Advanced portfolio, is the home of choice for best-in-class materials science for more than 30 years. Following this fast-growing and interdisciplinary field, we are considering and publishing the most important discoveries on any and all materials from materials scientists, chemists, physicists, engineers as well as health and life scientists and bringing you the latest results and trends in modern materials-related research every week.