T. Kaewmaraya , R.G. Amorim , N. Thatsami , P. Moontragoon , S. Pinitsoontorn , H. Bae , H. Lee , N. Nasiri , T. Hussain
{"title":"基于钼基过渡金属二硫族化物的高效室温乙烯传感","authors":"T. Kaewmaraya , R.G. Amorim , N. Thatsami , P. Moontragoon , S. Pinitsoontorn , H. Bae , H. Lee , N. Nasiri , T. Hussain","doi":"10.1016/j.apsusc.2025.162984","DOIUrl":null,"url":null,"abstract":"<div><div>Detecting ethylene (C<sub>2</sub>H<sub>4</sub>) is essential across various domains, including agricultural logistics, fruit quality control, healthcare, and industry. However, effective C<sub>2</sub>H<sub>4</sub> sensing poses significant challenges due to the molecule’s non-polar nature and the requirement for ultra-high sensitivity at trace concentrations (parts-per-billion, ppb). Traditional C<sub>2</sub>H<sub>4</sub> sensors often rely on costly, complex, and less portable techniques. In this study, we demonstrate the potential of two-dimensional (2D) molybdenum-based transition metal dichalcogenides (TMDs), including MoS<sub>2</sub>, MoSe<sub>2</sub>, MoTe<sub>2</sub>, and their defective/surface-functionalized forms, as effective C<sub>2</sub>H<sub>4</sub> sensors based on portable electrical transduction. Using a combination of theoretical approaches, including density functional theory (DFT), non-equilibrium Green’s functions (NEGF), and thermodynamics analysis by Langmuir adsorption model, we explore the C<sub>2</sub>H<sub>4</sub> sensing capabilities of the mentioned materials. Our findings indicate that pristine TMDs show limited adsorption affinity toward C<sub>2</sub>H<sub>4,</sub> but doping with elements such as silicon (Si), germanium (Ge), and tin (Sn) remarkably magnifies their adsorption. Specifically, Si-doped MoS<sub>2</sub>, Ge-doped MoSe<sub>2</sub>, and Sn-doped MoTe<sub>2</sub> exhibit strong covalent bonding with C<sub>2</sub>H<sub>4</sub> through Si-C, Ge-C, and Sn-C interactions, triggering contrastive modulation of electronic transport upon C<sub>2</sub>H<sub>4</sub> exposure. Among these, Si-doped MoS<sub>2</sub> demonstrates outstanding sensitivity and is capable of detecting C<sub>2</sub>H<sub>4</sub> at ppb levels under ambient temperatures. It achieves a sensitivity of 77.9 % with an ultrafast recovery time of 3.79 × 10<sup>−2</sup> ms at 500.0 K, making it a prime candidate for advanced C<sub>2</sub>H<sub>4</sub>-sensing applications.</div></div>","PeriodicalId":247,"journal":{"name":"Applied Surface Science","volume":"697 ","pages":"Article 162984"},"PeriodicalIF":6.9000,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly efficient room-temperature ethylene sensing with molybdenum based transition metal dichalcogenides\",\"authors\":\"T. Kaewmaraya , R.G. Amorim , N. Thatsami , P. Moontragoon , S. Pinitsoontorn , H. Bae , H. Lee , N. Nasiri , T. Hussain\",\"doi\":\"10.1016/j.apsusc.2025.162984\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Detecting ethylene (C<sub>2</sub>H<sub>4</sub>) is essential across various domains, including agricultural logistics, fruit quality control, healthcare, and industry. However, effective C<sub>2</sub>H<sub>4</sub> sensing poses significant challenges due to the molecule’s non-polar nature and the requirement for ultra-high sensitivity at trace concentrations (parts-per-billion, ppb). Traditional C<sub>2</sub>H<sub>4</sub> sensors often rely on costly, complex, and less portable techniques. In this study, we demonstrate the potential of two-dimensional (2D) molybdenum-based transition metal dichalcogenides (TMDs), including MoS<sub>2</sub>, MoSe<sub>2</sub>, MoTe<sub>2</sub>, and their defective/surface-functionalized forms, as effective C<sub>2</sub>H<sub>4</sub> sensors based on portable electrical transduction. Using a combination of theoretical approaches, including density functional theory (DFT), non-equilibrium Green’s functions (NEGF), and thermodynamics analysis by Langmuir adsorption model, we explore the C<sub>2</sub>H<sub>4</sub> sensing capabilities of the mentioned materials. Our findings indicate that pristine TMDs show limited adsorption affinity toward C<sub>2</sub>H<sub>4,</sub> but doping with elements such as silicon (Si), germanium (Ge), and tin (Sn) remarkably magnifies their adsorption. Specifically, Si-doped MoS<sub>2</sub>, Ge-doped MoSe<sub>2</sub>, and Sn-doped MoTe<sub>2</sub> exhibit strong covalent bonding with C<sub>2</sub>H<sub>4</sub> through Si-C, Ge-C, and Sn-C interactions, triggering contrastive modulation of electronic transport upon C<sub>2</sub>H<sub>4</sub> exposure. Among these, Si-doped MoS<sub>2</sub> demonstrates outstanding sensitivity and is capable of detecting C<sub>2</sub>H<sub>4</sub> at ppb levels under ambient temperatures. It achieves a sensitivity of 77.9 % with an ultrafast recovery time of 3.79 × 10<sup>−2</sup> ms at 500.0 K, making it a prime candidate for advanced C<sub>2</sub>H<sub>4</sub>-sensing applications.</div></div>\",\"PeriodicalId\":247,\"journal\":{\"name\":\"Applied Surface Science\",\"volume\":\"697 \",\"pages\":\"Article 162984\"},\"PeriodicalIF\":6.9000,\"publicationDate\":\"2025-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Surface Science\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0169433225006981\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Surface Science","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0169433225006981","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
Highly efficient room-temperature ethylene sensing with molybdenum based transition metal dichalcogenides
Detecting ethylene (C2H4) is essential across various domains, including agricultural logistics, fruit quality control, healthcare, and industry. However, effective C2H4 sensing poses significant challenges due to the molecule’s non-polar nature and the requirement for ultra-high sensitivity at trace concentrations (parts-per-billion, ppb). Traditional C2H4 sensors often rely on costly, complex, and less portable techniques. In this study, we demonstrate the potential of two-dimensional (2D) molybdenum-based transition metal dichalcogenides (TMDs), including MoS2, MoSe2, MoTe2, and their defective/surface-functionalized forms, as effective C2H4 sensors based on portable electrical transduction. Using a combination of theoretical approaches, including density functional theory (DFT), non-equilibrium Green’s functions (NEGF), and thermodynamics analysis by Langmuir adsorption model, we explore the C2H4 sensing capabilities of the mentioned materials. Our findings indicate that pristine TMDs show limited adsorption affinity toward C2H4, but doping with elements such as silicon (Si), germanium (Ge), and tin (Sn) remarkably magnifies their adsorption. Specifically, Si-doped MoS2, Ge-doped MoSe2, and Sn-doped MoTe2 exhibit strong covalent bonding with C2H4 through Si-C, Ge-C, and Sn-C interactions, triggering contrastive modulation of electronic transport upon C2H4 exposure. Among these, Si-doped MoS2 demonstrates outstanding sensitivity and is capable of detecting C2H4 at ppb levels under ambient temperatures. It achieves a sensitivity of 77.9 % with an ultrafast recovery time of 3.79 × 10−2 ms at 500.0 K, making it a prime candidate for advanced C2H4-sensing applications.
期刊介绍:
Applied Surface Science covers topics contributing to a better understanding of surfaces, interfaces, nanostructures and their applications. The journal is concerned with scientific research on the atomic and molecular level of material properties determined with specific surface analytical techniques and/or computational methods, as well as the processing of such structures.