辐射诱导的Y2O3:Eu荧光粉:热释光特性和捕获参数研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yash D. Narad, Yatish R. Parauha, Naumov G. Nikolay, S. J. Dhoble
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引用次数: 0

摘要

本研究采用固相反应法制备了一系列不同浓度铕(Eu)的Y2O3:Eu荧光粉。通过x射线衍射(XRD)、扫描电镜(SEM)、傅里叶变换红外光谱(FT-IR)、热释光(TL)等多种技术对制备的材料进行了全面表征。对XRD数据进行Rietveld细化以研究相形成和结构性能。通过将样品置于不同的激发源,即伽马射线、碳离子束和氧离子束下,对合成的荧光粉的热释光性能进行了评估。结果表明,当Eu浓度为0.5 mol%时,暴露于γ射线下的Y2O3:Eu荧光粉的TL发射强度最高。相反,暴露于碳离子和氧离子束下的Y2O3:Eu荧光粉在较低的Eu浓度为0.3 mol%时显示出最高的TL发射强度。利用辉光曲线反褶积法(GCD)对材料中的陷阱进行反褶积分析。此外,利用GCD法、Chen峰形分析法和初始上升法计算了捕获参数。本研究结果表明,制备的Y2O3:Eu荧光粉在未来的剂量学研究中具有重要的应用潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Radiation-induced Y2O3:Eu phosphor: thermoluminescence characterization and trapping parameter investigations

In this study, a series of Y2O3:Eu phosphors with varying concentrations of europium (Eu) were synthesized using the solid-state reaction method. The prepared materials underwent comprehensive characterization through multiple techniques, including X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier-transform infrared spectroscopy (FT-IR), and thermoluminescence (TL) analysis. The XRD data were subjected to Rietveld refinement to investigate phase formation and structural properties. The thermoluminescent properties of the synthesized phosphors were assessed by subjecting the samples to different excitation sources, namely gamma rays, carbon ion beams, and oxygen ion beams. The results indicated that the Y2O3:Eu phosphor exposed to gamma rays exhibited the highest TL emission intensity when the Eu concentration was at 0.5 mol%. Conversely, the Y2O3:Eu phosphor exposed to carbon ion and oxygen ion beams displayed the highest TL emission intensity at a lower Eu concentration of 0.3 mol%. The analysis of traps involved in material was deconvolute the glow curves using Glow Curve Deconvolution (GCD) method. Additionally, trapping parameters were calculated using the GCD method, Chen's peak shape analysis, and the Initial Rise method. The findings of this investigation suggest that the prepared Y2O3:Eu phosphors hold significant potential for future research in dosimetry applications.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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