掺镓CdO/p-Si异质结的合成及参数评价

IF 2.8 3区物理与天体物理 Q2 PHYSICS, CONDENSED MATTER

Physica B-condensed Matter Pub Date : 2025-02-26 DOI:10.1016/j.physb.2025.417043

Abdur Rouf, Md Saifur Rahman, M. Mojibur Rahman, M.S.I. Sarker, M.K.R. Khan

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引用次数: 0

摘要

本文采用喷雾热解技术制备了掺镓（Ga）的CdO:Ga/p-Si异质结薄膜。对CdO和CdO:Ga薄膜的光学研究表明，在近红外（NIR）区域，CdO和CdO:Ga薄膜的透明度在78% ~ 73%之间。CdO和CdO:Ga薄膜都是直接带隙半导体，薄膜厚度不同，带隙变宽。在p-Si衬底上生长的CdO:Ga薄膜的光致发光（PL）研究显示，在激发波长400 nm处有两个发射峰，这是由于激子发射和带间跃迁引起的。CdO和CdO:Ga的载流子浓度约为1020 cm−3，是n型半导体的表征。电流-电压（I-V）特性证实了CdO:Ga/p-Si异质结的整流二极管行为。通过理想因数和异质结构的C-V响应揭示了良好的二极管特性。

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Synthesis of gallium (Ga) doped CdO/p-Si heterojunction and evaluation of junction parameters

In this work, Gallium (Ga) doped CdO:Ga/p-Si heterojunction thin films are fabricated by spray pyrolysis technique. Optical study of CdO and CdO:Ga films showed that the transparency ranges from 78 % to 73 % in the near infrared (NIR) region. Both the CdO and CdO:Ga films are direct band gap semiconductor and the band gap widens for different thickness of thin films. The photoluminescence (PL) study of CdO:Ga films grown on p-Si substrate showed two emission peaks for excitation wavelength 400 nm which are due to exciton emission and the band to band transition. The carrier concentrations for the CdO and CdO:Ga are found of the order of 10²⁰ cm⁻³ are the indication of n-type semiconductors. The rectifying diode behavior of the CdO:Ga/p-Si heterojunctions is confirmed by the Current-Voltage (I-V) characteristics. The good diode characteristics are revealed through the ideality factor and the C–V response of the heterostructures.

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来源期刊

Physica B-condensed Matter 物理-物理：凝聚态物理

CiteScore

4.90

自引率

7.10%

发文量

703

审稿时长

44 days

期刊介绍： Physica B: Condensed Matter comprises all condensed matter and material physics that involve theoretical, computational and experimental work. Papers should contain further developments and a proper discussion on the physics of experimental or theoretical results in one of the following areas: -Magnetism -Materials physics -Nanostructures and nanomaterials -Optics and optical materials -Quantum materials -Semiconductors -Strongly correlated systems -Superconductivity -Surfaces and interfaces