一种可编程高效电荷泵系统，用于提高电流驱动能力的嵌入式快闪存储器

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-03-12 DOI:10.1016/j.mejo.2025.106626

Tao Xu, Yuqiao Xie, Guoji Qiu, Zhiyuan Hu, Zhengxuan Zhang, Dawei Bi

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引用次数: 0

摘要

闪存是嵌入式系统的关键元件，其工作需要高电压，通常由电荷泵提供。本文提出了一种可编程的高效率电荷泵系统，该系统采用40nm块体CMOS技术，由1.1 V电源供电。该系统集成了低压MOS自适应体偏交叉耦合电荷泵和具有倍频结构的高压MOS自适应体偏交叉耦合电荷泵。该系统根据电流负载自适应激活适当的电荷泵组合，并与新颖的时钟耦合电压调制电路一起工作，以降低功耗并提高效率。在50mhz时钟下，可编程高效电荷泵系统在292μA和235μA时可稳定输出电压为6V和8V。在292μA电流负载下，效率达到64.04%，面积为0.145 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A programmable high efficiency charge pump system for embedded flash memory with improved current driving capability

Flash memory, a key element in embedded systems, necessitates high voltage for its operation, which is usually provided by charge pumps. This paper presents a programmable high efficiency charge pump system in 40 nm bulk CMOS technology powered from a 1.1 V supply. The proposed system integrates low-voltage MOS self-adaptive body-biased cross-coupled charge pumps and a high-voltage MOS self-adaptive body-biased cross-coupled charge pump with a doubler structure. The system adaptively activates the appropriate charge pump combination based on the current load, working in conjunction with a novel clock coupled voltage modulation circuit to achieve reduced power consumption and improved efficiency. The programmable high efficiency charge pump system can stabilize an output voltage of 6V at

292 μ A

and 8V at

235 μ A

under a 50 MHz clock. It achieves a peak efficiency of 64.04% at

292 μ A

current load and occupies 0.145 mm

^{2}

in area.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.