射频溅射ZnTe薄膜物理性能的调整:衬底温度的作用。

IF 2.6 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Beilstein Journal of Nanotechnology Pub Date : 2025-03-05 eCollection Date: 2025-01-01 DOI:10.3762/bjnano.16.25
Kafi Devi, Usha Rani, Arun Kumar, Divya Gupta, Sanjeev Aggarwal
{"title":"射频溅射ZnTe薄膜物理性能的调整:衬底温度的作用。","authors":"Kafi Devi, Usha Rani, Arun Kumar, Divya Gupta, Sanjeev Aggarwal","doi":"10.3762/bjnano.16.25","DOIUrl":null,"url":null,"abstract":"<p><p>In this study, zinc telluride (ZnTe) films were grown on quartz substrates at room temperature, 300 °C, 400 °C, 500 °C, and 600 °C using RF sputtering. The thickness of the films has been found to decrease from 940 nm at room temperature to 200 nm at 600 °C with increasing substrate temperature. The structural investigation using grazing incidence angle X-ray diffraction revealed that films deposited at room temperature are amorphous; those deposited at other substrate temperatures are polycrystalline with a cubic zincblende structure and a preferred orientation along the [111] direction. An increase in crystallite size (from 37.60 ± 0.42 Å to 68.88 ± 1.04 Å) is observed with increased substrate temperature. This leads to a reduction in microstrain and dislocation density. The optical studies using UV-vis-NIR spectroscopy reveal that the transmittance of films increases with substrate temperature. Further, the shift in transmittance threshold towards lower wavelengths with substrate temperature indicates that the optical bandgap of the films can be tuned from 1.47 ± 0.02 eV to 3.11 ± 0.14 eV. The surface morphology of the films studied using atomic force microscopy reveals that there is uniform grain growth on the surface. Various morphological parameters such as roughness, particle size, particle density, skewness, and kurtosis were determined. Current-voltage characteristics indicate that the conductivity of the films increased with substrate temperature. The observed variations in structural, morphological, and optical parameters have been discussed and correlated. The wide bandgap (3.11 eV), high crystallinity, high transmittance, and high conductivity of the ZnTe film produced at 600 °C make it a suitable candidate for use as a buffer layer in solar cell applications.</p>","PeriodicalId":8802,"journal":{"name":"Beilstein Journal of Nanotechnology","volume":"16 ","pages":"333-348"},"PeriodicalIF":2.6000,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11897647/pdf/","citationCount":"0","resultStr":"{\"title\":\"Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature.\",\"authors\":\"Kafi Devi, Usha Rani, Arun Kumar, Divya Gupta, Sanjeev Aggarwal\",\"doi\":\"10.3762/bjnano.16.25\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>In this study, zinc telluride (ZnTe) films were grown on quartz substrates at room temperature, 300 °C, 400 °C, 500 °C, and 600 °C using RF sputtering. The thickness of the films has been found to decrease from 940 nm at room temperature to 200 nm at 600 °C with increasing substrate temperature. The structural investigation using grazing incidence angle X-ray diffraction revealed that films deposited at room temperature are amorphous; those deposited at other substrate temperatures are polycrystalline with a cubic zincblende structure and a preferred orientation along the [111] direction. An increase in crystallite size (from 37.60 ± 0.42 Å to 68.88 ± 1.04 Å) is observed with increased substrate temperature. This leads to a reduction in microstrain and dislocation density. The optical studies using UV-vis-NIR spectroscopy reveal that the transmittance of films increases with substrate temperature. Further, the shift in transmittance threshold towards lower wavelengths with substrate temperature indicates that the optical bandgap of the films can be tuned from 1.47 ± 0.02 eV to 3.11 ± 0.14 eV. The surface morphology of the films studied using atomic force microscopy reveals that there is uniform grain growth on the surface. Various morphological parameters such as roughness, particle size, particle density, skewness, and kurtosis were determined. Current-voltage characteristics indicate that the conductivity of the films increased with substrate temperature. The observed variations in structural, morphological, and optical parameters have been discussed and correlated. The wide bandgap (3.11 eV), high crystallinity, high transmittance, and high conductivity of the ZnTe film produced at 600 °C make it a suitable candidate for use as a buffer layer in solar cell applications.</p>\",\"PeriodicalId\":8802,\"journal\":{\"name\":\"Beilstein Journal of Nanotechnology\",\"volume\":\"16 \",\"pages\":\"333-348\"},\"PeriodicalIF\":2.6000,\"publicationDate\":\"2025-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11897647/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Beilstein Journal of Nanotechnology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.3762/bjnano.16.25\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2025/1/1 0:00:00\",\"PubModel\":\"eCollection\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Beilstein Journal of Nanotechnology","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3762/bjnano.16.25","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/1/1 0:00:00","PubModel":"eCollection","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

在本研究中,采用射频溅射技术,在室温、300°C、400°C、500°C和600°C的石英衬底上生长碲化锌(ZnTe)薄膜。随着衬底温度的升高,薄膜的厚度从室温时的940 nm减小到600℃时的200 nm。利用掠射角x射线衍射对其结构进行了研究,发现室温下沉积的薄膜是无定形的;在其他衬底温度下沉积的是具有立方锌闪锌矿结构和沿[111]方向的优选取向的多晶。随着衬底温度的升高,晶粒尺寸从37.60±0.42 Å增加到68.88±1.04 Å。这导致微应变和位错密度的降低。紫外-可见-近红外光谱的光学研究表明,薄膜的透过率随衬底温度的升高而增加。此外,透射率阈值随衬底温度的变化而向更低波长移动,表明薄膜的光学带隙可以从1.47±0.02 eV调谐到3.11±0.14 eV。利用原子力显微镜对薄膜的表面形貌进行了研究,发现薄膜表面有均匀的晶粒生长。测定了各种形态参数,如粗糙度、粒度、颗粒密度、偏度和峰度。电流-电压特性表明,薄膜的电导率随衬底温度的升高而升高。观察到的结构、形态和光学参数的变化进行了讨论和关联。在600°C下制备的ZnTe薄膜具有宽带隙(3.11 eV)、高结晶度、高透射率和高导电性,使其成为太阳能电池应用中作为缓冲层的合适候选材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Tailoring of physical properties of RF-sputtered ZnTe films: role of substrate temperature.

In this study, zinc telluride (ZnTe) films were grown on quartz substrates at room temperature, 300 °C, 400 °C, 500 °C, and 600 °C using RF sputtering. The thickness of the films has been found to decrease from 940 nm at room temperature to 200 nm at 600 °C with increasing substrate temperature. The structural investigation using grazing incidence angle X-ray diffraction revealed that films deposited at room temperature are amorphous; those deposited at other substrate temperatures are polycrystalline with a cubic zincblende structure and a preferred orientation along the [111] direction. An increase in crystallite size (from 37.60 ± 0.42 Å to 68.88 ± 1.04 Å) is observed with increased substrate temperature. This leads to a reduction in microstrain and dislocation density. The optical studies using UV-vis-NIR spectroscopy reveal that the transmittance of films increases with substrate temperature. Further, the shift in transmittance threshold towards lower wavelengths with substrate temperature indicates that the optical bandgap of the films can be tuned from 1.47 ± 0.02 eV to 3.11 ± 0.14 eV. The surface morphology of the films studied using atomic force microscopy reveals that there is uniform grain growth on the surface. Various morphological parameters such as roughness, particle size, particle density, skewness, and kurtosis were determined. Current-voltage characteristics indicate that the conductivity of the films increased with substrate temperature. The observed variations in structural, morphological, and optical parameters have been discussed and correlated. The wide bandgap (3.11 eV), high crystallinity, high transmittance, and high conductivity of the ZnTe film produced at 600 °C make it a suitable candidate for use as a buffer layer in solar cell applications.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.70
自引率
3.20%
发文量
109
审稿时长
2 months
期刊介绍: The Beilstein Journal of Nanotechnology is an international, peer-reviewed, Open Access journal. It provides a unique platform for rapid publication without any charges (free for author and reader) – Platinum Open Access. The content is freely accessible 365 days a year to any user worldwide. Articles are available online immediately upon publication and are publicly archived in all major repositories. In addition, it provides a platform for publishing thematic issues (theme-based collections of articles) on topical issues in nanoscience and nanotechnology. The journal is published and completely funded by the Beilstein-Institut, a non-profit foundation located in Frankfurt am Main, Germany. The editor-in-chief is Professor Thomas Schimmel – Karlsruhe Institute of Technology. He is supported by more than 20 associate editors who are responsible for a particular subject area within the scope of the journal.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信