Eu和fe取代Gd2TiO5光学性质的实验和第一性原理研究

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Ritu Nain, Vikash Mishra, Vinayak Mishra, Pankaj R. Sagdeo
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引用次数: 0

摘要

本文研究了复杂稀土氧化物(如Gd2TiO5)中邻近费米能级(Ef)的Ti-3d和Gd-5d态的贡献。为此,采用固态合成方法制备了具有Gd2-xEuxTiO5和Gd2Ti1-xFexO5组成的纯Eu-/ fe取代样品。采用x射线衍射和Rietveld细化研究对上述样品的相纯度进行了研究。用光学吸收光谱法测定了这些样品的光学带隙,发现fe取代样品的光学带隙与eu取代样品的(~ 0.14 eV)相比有很大的变化(~ 1 eV)。这些观测结果进一步得到了VASP中使用GGA + U方法进行的第一性原理计算的支持。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental and first-principles investigation on the optical properties of Eu and Fe-substituted Gd2TiO5

The contribution of Ti-3d and Gd-5d states near Fermi level (Ef) in complex rare-earth oxides, such as Gd2TiO5, has been investigated. For this purpose, pure and Eu-/Fe-substituted samples having compositions of Gd2-xEuxTiO5 and Gd2Ti1-xFexO5 have been prepared using the solid-state synthesis route. The X-ray diffraction followed by Rietveld refinement studies was carried out to investigate the phase purity of the samples mentioned above. The optical bandgap of these samples has been examined using optical absorption spectroscopy and it has been observed that the optical bandgap shows substantial variation (~ 1 eV) for the Fe-substituted samples as compared to that of Eu-substituted (~ 0.14 eV) samples. These observations were further supported by first-principles calculations using the GGA + U methodology implemented in VASP.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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