毫米波频率下晶圆上器件最佳间距技术

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Rob D. Jones;Jerome Cheron;Joseph E. Diener;Peter H. Aaen;Richard A. Chamberlin;Benjamin F. Jamroz;Dylan F. Williams;Ari D. Feldman;Atef Z. Elsherbeni
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引用次数: 0

摘要

在这封信中,我们提出了一种技术,可以根据被测设备(DUT)的阻抗来确定附近结构的有效放置,这在当前的布局指南中被忽视了。该技术包括扫描被测件的阻抗和附近结构的空间位置,以创建一个可以放置结构的地图,同时最小化与被测件的耦合以及设备之间的空间。利用氮化镓(GaN)高电子迁移率晶体管(HEMT)测量,在有和没有近线的情况下,对高达110 GHz的模拟进行了验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Technique for Optimal On-Wafer Device Spacing at Millimeter-Wave Frequencies
In this letter, we present a technique to determine efficient placement of nearby structures to the device-under-test (DUT) based on the DUT’s impedance, which is overlooked in the current layout guidelines. This technique involves sweeping both the impedance of the DUT and the spatial location of the nearby structure to create a map where the structure can be placed that would simultaneously minimize coupling to the DUT as well as the space between devices. The simulations were validated up to 110 GHz using gallium nitride (GaN) high-electron-mobility transistor (HEMT) measurements with and without a nearby line.
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CiteScore
6.00
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