{"title":"65纳米CMOS中192 dbc /Hz峰值波形的宽带谐波整形压控振荡器","authors":"Shuai Deng;Xiongyao Luo;Xiang Yi;Pei Qin;Taotao Xu;Cao Wan;Quan Xue","doi":"10.1109/LMWT.2024.3520965","DOIUrl":null,"url":null,"abstract":"In this brief, a class-<inline-formula> <tex-math>$F_{23}$ </tex-math></inline-formula> voltage-controlled oscillator (VCO) aimed at achieving low-phase noise (PN) across the tuning range without manual harmonic tuning is presented. A new head resonator (HR) based on electric coupling is proposed to expand the common-mode (CM) resonance bandwidth at 2nd harmonic (<inline-formula> <tex-math>$2f_{0}$ </tex-math></inline-formula>) so that the 1/f noise is suppressed. The electric coupling preserves the ability to recover CM resonance bandwidth from manufacture variations. The higher differential-mode (DM) resonance frequency is positioned between <inline-formula> <tex-math>$2f_{0}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$3f_{0}$ </tex-math></inline-formula> to mitigate Groszkowski’s frequency shift caused by the DM harmonic current. Implemented in a 65-nm CMOS process with a die area of <inline-formula> <tex-math>$0.198~\\text {mm}^{2}$ </tex-math></inline-formula>, the VCO exhibits a PN of −122.5 dBc/Hz at a 1-MHz offset from 8 GHz, corresponding to a peak figure of merit (FoM) of 192 dBc/Hz.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"322-325"},"PeriodicalIF":0.0000,"publicationDate":"2025-01-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Wideband Harmonic Shaping VCO With 192-dBc/Hz Peak FoM in 65-nm CMOS\",\"authors\":\"Shuai Deng;Xiongyao Luo;Xiang Yi;Pei Qin;Taotao Xu;Cao Wan;Quan Xue\",\"doi\":\"10.1109/LMWT.2024.3520965\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this brief, a class-<inline-formula> <tex-math>$F_{23}$ </tex-math></inline-formula> voltage-controlled oscillator (VCO) aimed at achieving low-phase noise (PN) across the tuning range without manual harmonic tuning is presented. A new head resonator (HR) based on electric coupling is proposed to expand the common-mode (CM) resonance bandwidth at 2nd harmonic (<inline-formula> <tex-math>$2f_{0}$ </tex-math></inline-formula>) so that the 1/f noise is suppressed. The electric coupling preserves the ability to recover CM resonance bandwidth from manufacture variations. The higher differential-mode (DM) resonance frequency is positioned between <inline-formula> <tex-math>$2f_{0}$ </tex-math></inline-formula> and <inline-formula> <tex-math>$3f_{0}$ </tex-math></inline-formula> to mitigate Groszkowski’s frequency shift caused by the DM harmonic current. Implemented in a 65-nm CMOS process with a die area of <inline-formula> <tex-math>$0.198~\\\\text {mm}^{2}$ </tex-math></inline-formula>, the VCO exhibits a PN of −122.5 dBc/Hz at a 1-MHz offset from 8 GHz, corresponding to a peak figure of merit (FoM) of 192 dBc/Hz.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 3\",\"pages\":\"322-325\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-01-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10835183/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10835183/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A Wideband Harmonic Shaping VCO With 192-dBc/Hz Peak FoM in 65-nm CMOS
In this brief, a class-$F_{23}$ voltage-controlled oscillator (VCO) aimed at achieving low-phase noise (PN) across the tuning range without manual harmonic tuning is presented. A new head resonator (HR) based on electric coupling is proposed to expand the common-mode (CM) resonance bandwidth at 2nd harmonic ($2f_{0}$ ) so that the 1/f noise is suppressed. The electric coupling preserves the ability to recover CM resonance bandwidth from manufacture variations. The higher differential-mode (DM) resonance frequency is positioned between $2f_{0}$ and $3f_{0}$ to mitigate Groszkowski’s frequency shift caused by the DM harmonic current. Implemented in a 65-nm CMOS process with a die area of $0.198~\text {mm}^{2}$ , the VCO exhibits a PN of −122.5 dBc/Hz at a 1-MHz offset from 8 GHz, corresponding to a peak figure of merit (FoM) of 192 dBc/Hz.