65纳米CMOS中192 dbc /Hz峰值波形的宽带谐波整形压控振荡器

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Shuai Deng;Xiongyao Luo;Xiang Yi;Pei Qin;Taotao Xu;Cao Wan;Quan Xue
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引用次数: 0

摘要

本文介绍了一种可在整个调谐范围内实现低相位噪声(PN)而无需手动谐波调谐的f_bb_0级压控振荡器(VCO)。提出了一种基于电耦合的新型头谐振器(HR),以扩大共模(CM)谐振在2次谐波($2f_{0}$)处的带宽,从而抑制1/f噪声。电耦合保留了从制造变化中恢复CM共振带宽的能力。较高的差模(DM)谐振频率位于$2f_{0}$和$3f_{0}$之间,以减轻由DM谐波电流引起的Groszkowski频移。在65纳米CMOS工艺中实现,芯片面积为0.198~\text {mm}^{2}$, VCO在8 GHz的1 mhz偏移处的PN为- 122.5 dBc/Hz,对应于峰值性能图(FoM)为192 dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Wideband Harmonic Shaping VCO With 192-dBc/Hz Peak FoM in 65-nm CMOS
In this brief, a class- $F_{23}$ voltage-controlled oscillator (VCO) aimed at achieving low-phase noise (PN) across the tuning range without manual harmonic tuning is presented. A new head resonator (HR) based on electric coupling is proposed to expand the common-mode (CM) resonance bandwidth at 2nd harmonic ( $2f_{0}$ ) so that the 1/f noise is suppressed. The electric coupling preserves the ability to recover CM resonance bandwidth from manufacture variations. The higher differential-mode (DM) resonance frequency is positioned between $2f_{0}$ and $3f_{0}$ to mitigate Groszkowski’s frequency shift caused by the DM harmonic current. Implemented in a 65-nm CMOS process with a die area of $0.198~\text {mm}^{2}$ , the VCO exhibits a PN of −122.5 dBc/Hz at a 1-MHz offset from 8 GHz, corresponding to a peak figure of merit (FoM) of 192 dBc/Hz.
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