Liang Zhang;Yunbo Rao;Xu Cheng;Jiangan Han;Xianhu Luo;Xianjin Deng;Binbin Cheng;Wei Su
{"title":"基于130纳米SiGe技术的78 - 106 ghz电流复用LNA,最小NF为4db,功耗为12.5 mw","authors":"Liang Zhang;Yunbo Rao;Xu Cheng;Jiangan Han;Xianhu Luo;Xianjin Deng;Binbin Cheng;Wei Su","doi":"10.1109/LMWT.2025.3527522","DOIUrl":null,"url":null,"abstract":"In this letter, a W-band broadband low-noise amplifier (LNA) with low noise figure (NF) and low power consumption is proposed based on a four-stage common-emitter (CE) topology. Noise measure (NM) is adopted as the design method to optimize the overall noise performance. The source degeneration inductor together with the slotted-metal-line-based input network is utilized to achieve the optimum NM and gain matching simultaneously. To enhance power efficiency, a zero-ohm-transmission-line (ZTL)-based current-reuse (CR) technique is employed. For verification, a wideband LNA is fabricated in 130-nm SiGe process with a chip size of 0.57 mm2. The measured results demonstrate a peak small-signal gain of 20.4 dB, a 3-dB gain bandwidth (BW) ranging from 78 to 106 GHz, a minimum NF of 4 dB, an IP1dB exceeding −19.8 dBm, and a power dissipation of 12.5 mW with a supply voltage of 2.5 V. Meanwhile, the proposed LNA exhibits an exceptionally high figure-of-merit (FoM) of 159.4 in terms of gain, BW, NF, and power consumption.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"330-333"},"PeriodicalIF":0.0000,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 78–106-GHz Current-Reuse LNA With 4-dB Minimum NF and 12.5-mW Power Consumption Based on 130-nm SiGe Technology\",\"authors\":\"Liang Zhang;Yunbo Rao;Xu Cheng;Jiangan Han;Xianhu Luo;Xianjin Deng;Binbin Cheng;Wei Su\",\"doi\":\"10.1109/LMWT.2025.3527522\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this letter, a W-band broadband low-noise amplifier (LNA) with low noise figure (NF) and low power consumption is proposed based on a four-stage common-emitter (CE) topology. Noise measure (NM) is adopted as the design method to optimize the overall noise performance. The source degeneration inductor together with the slotted-metal-line-based input network is utilized to achieve the optimum NM and gain matching simultaneously. To enhance power efficiency, a zero-ohm-transmission-line (ZTL)-based current-reuse (CR) technique is employed. For verification, a wideband LNA is fabricated in 130-nm SiGe process with a chip size of 0.57 mm2. The measured results demonstrate a peak small-signal gain of 20.4 dB, a 3-dB gain bandwidth (BW) ranging from 78 to 106 GHz, a minimum NF of 4 dB, an IP1dB exceeding −19.8 dBm, and a power dissipation of 12.5 mW with a supply voltage of 2.5 V. Meanwhile, the proposed LNA exhibits an exceptionally high figure-of-merit (FoM) of 159.4 in terms of gain, BW, NF, and power consumption.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 3\",\"pages\":\"330-333\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-01-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10843848/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10843848/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 78–106-GHz Current-Reuse LNA With 4-dB Minimum NF and 12.5-mW Power Consumption Based on 130-nm SiGe Technology
In this letter, a W-band broadband low-noise amplifier (LNA) with low noise figure (NF) and low power consumption is proposed based on a four-stage common-emitter (CE) topology. Noise measure (NM) is adopted as the design method to optimize the overall noise performance. The source degeneration inductor together with the slotted-metal-line-based input network is utilized to achieve the optimum NM and gain matching simultaneously. To enhance power efficiency, a zero-ohm-transmission-line (ZTL)-based current-reuse (CR) technique is employed. For verification, a wideband LNA is fabricated in 130-nm SiGe process with a chip size of 0.57 mm2. The measured results demonstrate a peak small-signal gain of 20.4 dB, a 3-dB gain bandwidth (BW) ranging from 78 to 106 GHz, a minimum NF of 4 dB, an IP1dB exceeding −19.8 dBm, and a power dissipation of 12.5 mW with a supply voltage of 2.5 V. Meanwhile, the proposed LNA exhibits an exceptionally high figure-of-merit (FoM) of 159.4 in terms of gain, BW, NF, and power consumption.