基于130纳米SiGe技术的78 - 106 ghz电流复用LNA,最小NF为4db,功耗为12.5 mw

0 ENGINEERING, ELECTRICAL & ELECTRONIC
Liang Zhang;Yunbo Rao;Xu Cheng;Jiangan Han;Xianhu Luo;Xianjin Deng;Binbin Cheng;Wei Su
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引用次数: 0

摘要

本文提出了一种基于四级共发射极(CE)拓扑结构的w波段宽带低噪声放大器(LNA),具有低噪声系数(NF)和低功耗。采用噪声测量(NM)作为优化整体噪声性能的设计方法。利用源退化电感和开槽金属线输入网络同时实现最优NM和增益匹配。为了提高功率效率,采用了基于零欧姆在线输电(ZTL)的电流复用(CR)技术。为了验证,采用130纳米SiGe工艺制作了宽带LNA,芯片尺寸为0.57 mm2。测量结果表明,小信号峰值增益为20.4 dB, 3db增益带宽(BW)范围为78 ~ 106 GHz,最小NF为4 dB, IP1dB超过- 19.8 dBm,电源电压为2.5 V时功耗为12.5 mW。同时,所提出的LNA在增益、BW、NF和功耗方面表现出159.4的优异值(FoM)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 78–106-GHz Current-Reuse LNA With 4-dB Minimum NF and 12.5-mW Power Consumption Based on 130-nm SiGe Technology
In this letter, a W-band broadband low-noise amplifier (LNA) with low noise figure (NF) and low power consumption is proposed based on a four-stage common-emitter (CE) topology. Noise measure (NM) is adopted as the design method to optimize the overall noise performance. The source degeneration inductor together with the slotted-metal-line-based input network is utilized to achieve the optimum NM and gain matching simultaneously. To enhance power efficiency, a zero-ohm-transmission-line (ZTL)-based current-reuse (CR) technique is employed. For verification, a wideband LNA is fabricated in 130-nm SiGe process with a chip size of 0.57 mm2. The measured results demonstrate a peak small-signal gain of 20.4 dB, a 3-dB gain bandwidth (BW) ranging from 78 to 106 GHz, a minimum NF of 4 dB, an IP1dB exceeding −19.8 dBm, and a power dissipation of 12.5 mW with a supply voltage of 2.5 V. Meanwhile, the proposed LNA exhibits an exceptionally high figure-of-merit (FoM) of 159.4 in terms of gain, BW, NF, and power consumption.
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