{"title":"基于非对称电流分布的0.2 - 3.2 ghz有源Balun-LNA","authors":"Yunyou Pu;Wei Li;Qiaoan Li;Xingyu Ma;Hongtao Xu","doi":"10.1109/LMWT.2024.3525066","DOIUrl":null,"url":null,"abstract":"This letter presents a wideband balun low-noise amplifier (LNA) with a proposed asymmetric current distribution for optimizing both noise figure (NF) and power consumption. The approach for enhancing differential balance is also proposed. The wideband balun-LNA was fabricated in 28-nm CMOS technology and achieves a remarkable 1.4–2.18-dB NF over 0.2–3.2 GHz with a power consumption of 17.4 mW from 1.1-V supply voltage. <inline-formula> <tex-math>$S_{11}$ </tex-math></inline-formula> is lower than −15.2 dB, and the gain is 24.4–26 dB across the operating bandwidth. The proposed balun-LNA shows an excellent FoM-II.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"326-329"},"PeriodicalIF":0.0000,"publicationDate":"2025-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 0.2–3.2-GHz Active Balun-LNA With 1.4–2.18-dB NF Utilizing Asymmetric Current Distribution in 28-nm CMOS\",\"authors\":\"Yunyou Pu;Wei Li;Qiaoan Li;Xingyu Ma;Hongtao Xu\",\"doi\":\"10.1109/LMWT.2024.3525066\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents a wideband balun low-noise amplifier (LNA) with a proposed asymmetric current distribution for optimizing both noise figure (NF) and power consumption. The approach for enhancing differential balance is also proposed. The wideband balun-LNA was fabricated in 28-nm CMOS technology and achieves a remarkable 1.4–2.18-dB NF over 0.2–3.2 GHz with a power consumption of 17.4 mW from 1.1-V supply voltage. <inline-formula> <tex-math>$S_{11}$ </tex-math></inline-formula> is lower than −15.2 dB, and the gain is 24.4–26 dB across the operating bandwidth. The proposed balun-LNA shows an excellent FoM-II.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 3\",\"pages\":\"326-329\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-01-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10837583/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10837583/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A 0.2–3.2-GHz Active Balun-LNA With 1.4–2.18-dB NF Utilizing Asymmetric Current Distribution in 28-nm CMOS
This letter presents a wideband balun low-noise amplifier (LNA) with a proposed asymmetric current distribution for optimizing both noise figure (NF) and power consumption. The approach for enhancing differential balance is also proposed. The wideband balun-LNA was fabricated in 28-nm CMOS technology and achieves a remarkable 1.4–2.18-dB NF over 0.2–3.2 GHz with a power consumption of 17.4 mW from 1.1-V supply voltage. $S_{11}$ is lower than −15.2 dB, and the gain is 24.4–26 dB across the operating bandwidth. The proposed balun-LNA shows an excellent FoM-II.
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