{"title":"微波WPT用AlGaN/GaN GADs的2.4 GHz高效整流特性","authors":"Naoya Kishimoto;Gen Taguchi;Yoichi Tsuchiya;Debaleen Biswas;Qiang Ma;Hidemasa Takahashi;Yuji Ando;Akio Wakejima","doi":"10.1109/LMWT.2024.3522057","DOIUrl":null,"url":null,"abstract":"We have demonstrated high-efficiency rectification characteristics of a diode using a AlGaN/GaN high-electron mobility transistor (HEMT) for microwave wireless power transfer (WPT). For diode operation of the device, the gate electrode and one of the ohmic electrodes of a normally off AlGaN/GaN HEMT were short-circuited, which was called as a gated-anode diode (GAD). The fabricated GAD showed a high current density of 390 mA/mm with a low turn-on voltage of +0.6 V and a high breakdown voltage over 75 V. The GAD exhibited a 2.4-GHz RF-to-DC conversion efficiency of 96% at an input power of 23 dBm, where the inputs were tuned up to third-order harmonic frequencies using an automated tuner. This result represents state-of-the-art efficiency performance in rectifiers at the 2.4-GHz band.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"310-313"},"PeriodicalIF":0.0000,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-Efficiency Rectification Characteristics at 2.4 GHz With AlGaN/GaN GADs for Microwave WPT\",\"authors\":\"Naoya Kishimoto;Gen Taguchi;Yoichi Tsuchiya;Debaleen Biswas;Qiang Ma;Hidemasa Takahashi;Yuji Ando;Akio Wakejima\",\"doi\":\"10.1109/LMWT.2024.3522057\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated high-efficiency rectification characteristics of a diode using a AlGaN/GaN high-electron mobility transistor (HEMT) for microwave wireless power transfer (WPT). For diode operation of the device, the gate electrode and one of the ohmic electrodes of a normally off AlGaN/GaN HEMT were short-circuited, which was called as a gated-anode diode (GAD). The fabricated GAD showed a high current density of 390 mA/mm with a low turn-on voltage of +0.6 V and a high breakdown voltage over 75 V. The GAD exhibited a 2.4-GHz RF-to-DC conversion efficiency of 96% at an input power of 23 dBm, where the inputs were tuned up to third-order harmonic frequencies using an automated tuner. This result represents state-of-the-art efficiency performance in rectifiers at the 2.4-GHz band.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 3\",\"pages\":\"310-313\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-01-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10824962/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10824962/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
High-Efficiency Rectification Characteristics at 2.4 GHz With AlGaN/GaN GADs for Microwave WPT
We have demonstrated high-efficiency rectification characteristics of a diode using a AlGaN/GaN high-electron mobility transistor (HEMT) for microwave wireless power transfer (WPT). For diode operation of the device, the gate electrode and one of the ohmic electrodes of a normally off AlGaN/GaN HEMT were short-circuited, which was called as a gated-anode diode (GAD). The fabricated GAD showed a high current density of 390 mA/mm with a low turn-on voltage of +0.6 V and a high breakdown voltage over 75 V. The GAD exhibited a 2.4-GHz RF-to-DC conversion efficiency of 96% at an input power of 23 dBm, where the inputs were tuned up to third-order harmonic frequencies using an automated tuner. This result represents state-of-the-art efficiency performance in rectifiers at the 2.4-GHz band.
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