Patrick E. Longhi;Sergio Colangeli;Walter Ciccognani;Peiman Parand;Antonio Serino;Ernesto Limiti
{"title":"4.2 db噪声图和20 db增益92 - 115 ghz GaAs LNA与热孔互连","authors":"Patrick E. Longhi;Sergio Colangeli;Walter Ciccognani;Peiman Parand;Antonio Serino;Ernesto Limiti","doi":"10.1109/LMWT.2024.3520229","DOIUrl":null,"url":null,"abstract":"Advanced interconnect technologies are enabling solutions to obtain adequate low-noise amplifier performance even when the circuit is packaged and connected inside a receiver module. In this letter, we present suitable technology and design solutions of a gallium arsenide low-noise amplifier operating in the telecom W-band (92–115 GHz) featuring 20-dB gain and 4.1-dB noise figure accounting for through-the-substrate RF interconnect (hot vias) effects. To the best of the author’s knowledge, this is the first low-noise amplifier with hot via interconnections operating up to 115 GHz showing characterized data in terms of noise figure and third-order intermodulation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 3","pages":"334-337"},"PeriodicalIF":0.0000,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10817650","citationCount":"0","resultStr":"{\"title\":\"4.1-dB Noise Figure and 20-dB Gain 92–115-GHz GaAs LNA With Hot Via Interconnections\",\"authors\":\"Patrick E. Longhi;Sergio Colangeli;Walter Ciccognani;Peiman Parand;Antonio Serino;Ernesto Limiti\",\"doi\":\"10.1109/LMWT.2024.3520229\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Advanced interconnect technologies are enabling solutions to obtain adequate low-noise amplifier performance even when the circuit is packaged and connected inside a receiver module. In this letter, we present suitable technology and design solutions of a gallium arsenide low-noise amplifier operating in the telecom W-band (92–115 GHz) featuring 20-dB gain and 4.1-dB noise figure accounting for through-the-substrate RF interconnect (hot vias) effects. To the best of the author’s knowledge, this is the first low-noise amplifier with hot via interconnections operating up to 115 GHz showing characterized data in terms of noise figure and third-order intermodulation.\",\"PeriodicalId\":73297,\"journal\":{\"name\":\"IEEE microwave and wireless technology letters\",\"volume\":\"35 3\",\"pages\":\"334-337\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2024-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10817650\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE microwave and wireless technology letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10817650/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"0\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10817650/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
4.1-dB Noise Figure and 20-dB Gain 92–115-GHz GaAs LNA With Hot Via Interconnections
Advanced interconnect technologies are enabling solutions to obtain adequate low-noise amplifier performance even when the circuit is packaged and connected inside a receiver module. In this letter, we present suitable technology and design solutions of a gallium arsenide low-noise amplifier operating in the telecom W-band (92–115 GHz) featuring 20-dB gain and 4.1-dB noise figure accounting for through-the-substrate RF interconnect (hot vias) effects. To the best of the author’s knowledge, this is the first low-noise amplifier with hot via interconnections operating up to 115 GHz showing characterized data in terms of noise figure and third-order intermodulation.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
