Xingyu Wei, Hujun Jia, Linna Zhao, Qiyu Su, Weitao Cao, Wanli Yang, Zhen Cao, Yintang Yang
{"title":"基于双源双通道沟槽栅极的垂直ttfet生物传感器性能研究","authors":"Xingyu Wei, Hujun Jia, Linna Zhao, Qiyu Su, Weitao Cao, Wanli Yang, Zhen Cao, Yintang Yang","doi":"10.1016/j.micrna.2025.208129","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, a dielectric modulated Vertical TFET Biosensor Based on Dual-source Dual-channel Trench Gate is proposed. It is compared with an embedded source TFET (ES-TFET) biosensor by computer-aided design (TACD). Various aspects such as switching ratio, transconductance, saturation current and sensitivity are analyzed. It is concluded that the DSDC-TG-TFET electrical characteristics and sensitivity is superior to that of the ES-TFET. Upon <em>K</em> = 10, <em>S</em><sub><em>Ion</em></sub> = 1.86✕10<sup>7</sup>, <em>S</em><sub><em>Ion/Ioff</em></sub> = 1.84✕10<sup>7</sup> and <em>S</em><sub><em>gm</em></sub> = 1.62✕10<sup>7</sup>.The characteristics mentioned are 2.09✕10<sup>5</sup> times, 2.12✕10<sup>5</sup> times and 2.33✕10<sup>5</sup> times better than ES-TFET, respectively. In addition, this paper also perform noise analysis and linearity analysis for DSDC-TG-TFET. All device simulations were performed in TCAD environment with well-calibrated structure.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208129"},"PeriodicalIF":2.7000,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Performance investigation of vertical TFET biosensor based on dual-source dual-channel trench gate\",\"authors\":\"Xingyu Wei, Hujun Jia, Linna Zhao, Qiyu Su, Weitao Cao, Wanli Yang, Zhen Cao, Yintang Yang\",\"doi\":\"10.1016/j.micrna.2025.208129\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this paper, a dielectric modulated Vertical TFET Biosensor Based on Dual-source Dual-channel Trench Gate is proposed. It is compared with an embedded source TFET (ES-TFET) biosensor by computer-aided design (TACD). Various aspects such as switching ratio, transconductance, saturation current and sensitivity are analyzed. It is concluded that the DSDC-TG-TFET electrical characteristics and sensitivity is superior to that of the ES-TFET. Upon <em>K</em> = 10, <em>S</em><sub><em>Ion</em></sub> = 1.86✕10<sup>7</sup>, <em>S</em><sub><em>Ion/Ioff</em></sub> = 1.84✕10<sup>7</sup> and <em>S</em><sub><em>gm</em></sub> = 1.62✕10<sup>7</sup>.The characteristics mentioned are 2.09✕10<sup>5</sup> times, 2.12✕10<sup>5</sup> times and 2.33✕10<sup>5</sup> times better than ES-TFET, respectively. In addition, this paper also perform noise analysis and linearity analysis for DSDC-TG-TFET. All device simulations were performed in TCAD environment with well-calibrated structure.</div></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":\"202 \",\"pages\":\"Article 208129\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2025-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012325000585\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012325000585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Performance investigation of vertical TFET biosensor based on dual-source dual-channel trench gate
In this paper, a dielectric modulated Vertical TFET Biosensor Based on Dual-source Dual-channel Trench Gate is proposed. It is compared with an embedded source TFET (ES-TFET) biosensor by computer-aided design (TACD). Various aspects such as switching ratio, transconductance, saturation current and sensitivity are analyzed. It is concluded that the DSDC-TG-TFET electrical characteristics and sensitivity is superior to that of the ES-TFET. Upon K = 10, SIon = 1.86✕107, SIon/Ioff = 1.84✕107 and Sgm = 1.62✕107.The characteristics mentioned are 2.09✕105 times, 2.12✕105 times and 2.33✕105 times better than ES-TFET, respectively. In addition, this paper also perform noise analysis and linearity analysis for DSDC-TG-TFET. All device simulations were performed in TCAD environment with well-calibrated structure.
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