Kyu-Young Kim, Chang-Min Lee, Amirehsan Boreiri, Purbita Purkayastha, Fariba Islam, Samuel Harper, Je-Hyung Kim, Edo Waks
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Bright Purcell-Enhanced Single Photon Emission from a Silicon G Center
Silicon G centers show significant promise as single photon sources in a scalable silicon platform. But these color centers have large nonradiative decay and a low Debye–Waller factor, limiting their usability in quantum applications. In this work, we demonstrate bright Purcell-enhanced emission from a silicon G center by coupling it to a nanophotonic cavity. The nanobeam cavity enhances the spontaneous emission rate of a single G center by a factor of 6, corresponding to a Purcell factor greater than 31 when accounting for decay into the phonon sideband. We obtain a spontaneous emission rate of 0.97 ns, which is the fastest single photon emission rate reported in silicon. With this radiative enhancement, we achieve an order of magnitude improvement in emitter brightness compared to previously reported values. These results pave the way for scalable quantum light sources on a silicon photonic chip.
期刊介绍:
Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including:
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- Modeling and simulation of synthetic, assembly, and interaction processes
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- Applications of nanoscale materials in living and environmental systems
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