基于二氧化钒和石墨烯的多功能可调谐太赫兹超材料吸收体的理论研究

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Leila Shakiba, Mohammad Reza Salehi
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引用次数: 0

摘要

本文介绍并研究了一种基于石墨烯和二氧化钒的太赫兹区超材料吸收体。该结构由四层(金层、介电层、石墨烯和VO 2)组成,并利用VO 2的相变特性和石墨烯的可调性进行设计。仿真结果表明,在绝缘相位,该结构作为窄带吸收体,具有明显的吸收峰,而在金属相位,该结构在4.28-7.55 THz范围内具有超过80%的宽带吸收性能。通过电场分布和表面电流分析了结构的性能,研究了温度变化和化学势调整对吸收光谱的影响。这种结构的一个显著特点是它的可调吸收使温度和化学势的变化。该结构的关键属性,包括可调性、对温度变化的敏感性及其在逻辑门中的应用,使其成为太赫兹区域传感和光信息处理应用的合适候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Theoretical investigation of a multifunctional tunable terahertz metamaterial absorber based on vanadium dioxide and graphene

Theoretical investigation of a multifunctional tunable terahertz metamaterial absorber based on vanadium dioxide and graphene

This paper introduces and investigates a graphene and vanadium dioxide based metamaterial absorber in the terahertz region. The proposed structure consists of four layers (gold, dielectric layer, graphene, and VO₂) and is designed using the phase transition properties of VO₂ and the tunability of graphene. Simulation results show that in the insulating phase, the structure operates as a narrowband absorber with distinct absorption peaks, while in the metallic phase, broadband performance with over 80% absorption in the 4.28–7.55 THz range is observed. The structure’s performance was analyzed through the electric field distribution and surface current, and the effects of temperature variations and chemical potential adjustments on the absorption spectrum were studied. A distinguishing feature of this structure is its tunable absorption enabled by temperature and chemical potential changes. The key attributes of this structure, including tunability, sensitivity to temperature changes, and its application in logic gates, make it a suitable candidate for sensing and optical information processing applications in the terahertz region.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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