2 μm调q脉冲,采用双包层光纤主振荡器功率放大器(MOPA),峰值功率强度为3.11 MW/cm2,脉冲能量为7.9µJ

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
H. Ahmad, M. U. M. Ithnahaini, M. Z. Samion, M. F. Ismail
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引用次数: 0

摘要

本文介绍了一种工作波长为1940 nm的被动高功率调q光纤激光器的研制和实验演示,该激光器利用MoWS2作为可饱和吸收剂(SA)。采用单模掺铥光纤(TmDF200)和双包层掺铥光纤(DC-TDF)放大器级构建调q振荡器。该激光系统的平均输出功率为304 mW,峰值功率强度为3.11 mW /cm²。脉冲能量为7.96µJ,重复频率为38.2 kHz,脉冲宽度为4.02µs。主放大器的斜率效率约为6.7%,信噪比(SNR)为40 dB。本研究结果表明,MoWS2 SA可用于开发鲁棒、稳定、高功率调q光纤激光器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
2 μm Q-switched pulses using a double-clad fiber master oscillator power amplifier (MOPA) with high peak power intensity of 3.11 MW/cm2 and pulse energy of 7.9 µJ

This report presents the development and experimental demonstration of a passively high-power Q-switched fiber laser operating at a wavelength of 1940 nm, utilizing MoWS2 as a saturable absorber (SA). A Q-switched oscillator was constructed using a single-mode thulium-doped fiber (TmDF200) and then to a double-clad thulium-doped fiber (DC-TDF) amplifier stage. The laser system demonstrated in this study showcases a notable average output power of 304 mW, delivering a peak power intensity of 3.11 MW/cm². The pulse energy was 7.96 µJ, while the repetition rate and pulse width were 38.2 kHz and 4.02 µs, respectively. The main amplifier exhibits a commendable slope efficiency of approximately 6.7% and 40 dB signal-to-noise ratio (SNR). The results of this study indicate that MoWS2 SA can be beneficial for developing robust, stable, high-power Q-switched fiber lasers.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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