氮化硅纳米波导的光学特性及其宽带红外光谱

IF 3.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Zahra Ostovar, Hamid R. Bakhtiarizadeh, Abolfazl Safaei Bezgabadi
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引用次数: 0

摘要

通过计算氮化硅纳米波导的光学参数,利用控制超连续谱产生过程的广义非线性Schrödinger方程,模拟了通过所需波导产生的超连续谱。根据已报道的纳米波导色散曲线,计算了波导结构参数在三种不同值下的色散系数。利用四阶龙格-库塔方法模拟了锯齿形脉冲(1kw, 30fs)在波导中的传播。本文对不同几何参数下的模拟超连续谱进行了比较。在氮化硅波导的特定几何形状,产生了一个极端的光谱展宽,特别是在红外区域。可以观察到,结构参数\({ H_2}\) = 50 nm的结构产生的超连续光谱比其他结构更宽,这是由于其色散曲线中存在多个零色散波长。生成的超连续光谱覆盖1260-5200 nm波长范围,平坦度为30 dB。此外,本文还讨论了这种超连续过程的孤子动力学。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Optical properties of a Si3N4 nanowaveguide and its broadband infrared spectra

By calculating the optical parameters of a silicon nitride nanowaveguide, the supercontinuum spectra generated through the desired waveguide is simulated making use of the generalized nonlinear Schrödinger equation which governs the supercontinuum generation process. The dispersion coefficients for three different values of a structural parameter of the waveguide have been calculated from the reported dispersion profiles of the nanowaveguide. The pulse propagation of a sech-shaped pulse (1 kW, 30 fs) through the waveguide is simulated making use of the fourth-order Runge–Kutta method. Here, the simulated supercontinuum spectra are compared for different values of the chosen geometric parameter. At a specific geometry of the silicon nitride waveguide, an extreme spectral broadening is generated, especially in the infrared region. It can be observed that the generated supercontinuum spectra from the structure with the structural parameter \({ H_2}\) equals to 50 nm is broader than the others, which is due to the presence of multiple zero-dispersion wavelengths in its dispersion profile. The generated supercontinuum spectra cover a wavelength range of 1260–5200 nm with a flatness of 30 dB. Furthermore, the soliton dynamics through this supercontinuum process have been discussed.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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