Muhammad Abiyyu Kenichi Purbayanto, Madhurya Chandel, Michał Makowski, Muhammad Danang Birowosuto, Verónica Montes-García, Kaitlyn Prenger, Artur Ciesielski, Michael Naguib, Agnieszka Maria Jastrzębska
{"title":"揭示界面电荷转移对V4C3Tx/质子化g-C3N4异质结构光活性和异常发光猝灭的作用。","authors":"Muhammad Abiyyu Kenichi Purbayanto, Madhurya Chandel, Michał Makowski, Muhammad Danang Birowosuto, Verónica Montes-García, Kaitlyn Prenger, Artur Ciesielski, Michael Naguib, Agnieszka Maria Jastrzębska","doi":"10.1021/acsami.4c19729","DOIUrl":null,"url":null,"abstract":"<p><p>Two-dimensional van der Waals heterostructures with exotic quantum phenomena have garnered a huge surge in the field of optoelectronic devices. Herein, we report spectroscopic evidence of efficient interfacial charge transfers at the interface of a novel 2D/2D V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i> MXene/protonated g-C<sub>3</sub>N<sub>4</sub> (PCN) heterostructured thin film, demonstrating robust photosensitivity and a large exciton activation energy of 139.5 meV. Through temperature-dependent photoluminescence (PL) and time-resolved PL spectroscopy, we unravel the photophysical mechanism driving efficient charge transfer and photosensitivity in V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i>/PCN heterostructures. These heterostructures exhibit superior photosensitivity to white and UV light compared with either PCN or V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i> pristine materials. Additionally, we observed significant PL quenching with unusual negative thermal quenching and extended charge carrier lifetime in the V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i>/PCN heterostructures across a broad temperature range of 70-370 K. Notably, at the elevated temperature of 370 K, the carrier lifetime was enhanced by more than 2-fold, making the heterostructures promising for optoelectronic applications. This work provides critical insight into the charge transfer mechanism between V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i> MXene and PCN, opening a new avenue for rationally designing g-C<sub>3</sub>N<sub>4</sub>-based heterostructures for highly photosensitive optoelectronic devices.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":"17454-17464"},"PeriodicalIF":8.2000,"publicationDate":"2025-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11931479/pdf/","citationCount":"0","resultStr":"{\"title\":\"Unraveling the Role of Interfacial Charge Transfer on Photoactivity and Anomalous Luminescence Quenching of V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i>/Protonated g-C<sub>3</sub>N<sub>4</sub> Heterostructures.\",\"authors\":\"Muhammad Abiyyu Kenichi Purbayanto, Madhurya Chandel, Michał Makowski, Muhammad Danang Birowosuto, Verónica Montes-García, Kaitlyn Prenger, Artur Ciesielski, Michael Naguib, Agnieszka Maria Jastrzębska\",\"doi\":\"10.1021/acsami.4c19729\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>Two-dimensional van der Waals heterostructures with exotic quantum phenomena have garnered a huge surge in the field of optoelectronic devices. Herein, we report spectroscopic evidence of efficient interfacial charge transfers at the interface of a novel 2D/2D V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i> MXene/protonated g-C<sub>3</sub>N<sub>4</sub> (PCN) heterostructured thin film, demonstrating robust photosensitivity and a large exciton activation energy of 139.5 meV. Through temperature-dependent photoluminescence (PL) and time-resolved PL spectroscopy, we unravel the photophysical mechanism driving efficient charge transfer and photosensitivity in V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i>/PCN heterostructures. These heterostructures exhibit superior photosensitivity to white and UV light compared with either PCN or V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i> pristine materials. Additionally, we observed significant PL quenching with unusual negative thermal quenching and extended charge carrier lifetime in the V<sub>4</sub>C<sub>3</sub>T<i><sub><i>x</i></sub></i>/PCN heterostructures across a broad temperature range of 70-370 K. Notably, at the elevated temperature of 370 K, the carrier lifetime was enhanced by more than 2-fold, making the heterostructures promising for optoelectronic applications. 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Unraveling the Role of Interfacial Charge Transfer on Photoactivity and Anomalous Luminescence Quenching of V4C3Tx/Protonated g-C3N4 Heterostructures.
Two-dimensional van der Waals heterostructures with exotic quantum phenomena have garnered a huge surge in the field of optoelectronic devices. Herein, we report spectroscopic evidence of efficient interfacial charge transfers at the interface of a novel 2D/2D V4C3Tx MXene/protonated g-C3N4 (PCN) heterostructured thin film, demonstrating robust photosensitivity and a large exciton activation energy of 139.5 meV. Through temperature-dependent photoluminescence (PL) and time-resolved PL spectroscopy, we unravel the photophysical mechanism driving efficient charge transfer and photosensitivity in V4C3Tx/PCN heterostructures. These heterostructures exhibit superior photosensitivity to white and UV light compared with either PCN or V4C3Tx pristine materials. Additionally, we observed significant PL quenching with unusual negative thermal quenching and extended charge carrier lifetime in the V4C3Tx/PCN heterostructures across a broad temperature range of 70-370 K. Notably, at the elevated temperature of 370 K, the carrier lifetime was enhanced by more than 2-fold, making the heterostructures promising for optoelectronic applications. This work provides critical insight into the charge transfer mechanism between V4C3Tx MXene and PCN, opening a new avenue for rationally designing g-C3N4-based heterostructures for highly photosensitive optoelectronic devices.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.