揭示界面电荷转移对V4C3Tx/质子化g-C3N4异质结构光活性和异常发光猝灭的作用。

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
ACS Applied Materials & Interfaces Pub Date : 2025-03-19 Epub Date: 2025-03-10 DOI:10.1021/acsami.4c19729
Muhammad Abiyyu Kenichi Purbayanto, Madhurya Chandel, Michał Makowski, Muhammad Danang Birowosuto, Verónica Montes-García, Kaitlyn Prenger, Artur Ciesielski, Michael Naguib, Agnieszka Maria Jastrzębska
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引用次数: 0

摘要

具有奇异量子现象的二维范德华异质结构在光电器件领域获得了巨大的发展。在此,我们报告了一种新型2D/2D V4C3Tx MXene/质子化g-C3N4 (PCN)异质结构薄膜界面上有效的界面电荷转移的光谱证据,显示出强大的光敏性和139.5 meV的大激子活化能。通过温度依赖的光致发光(PL)和时间分辨的PL光谱,我们揭示了驱动V4C3Tx/PCN异质结构中有效电荷转移和光敏性的光物理机制。与PCN或V4C3Tx原始材料相比,这些异质结构对白光和紫外光具有优越的光敏性。此外,在70-370 K的宽温度范围内,我们观察到V4C3Tx/PCN异质结构中显著的PL猝灭和异常的负热猝灭,并延长了载流子寿命。值得注意的是,在370 K的高温下,载流子寿命提高了2倍以上,使得异质结构具有光电应用前景。这项工作为V4C3Tx MXene与PCN之间的电荷转移机制提供了重要的见解,为合理设计高光敏光电器件中基于g- c3n4的异质结构开辟了新的途径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Unraveling the Role of Interfacial Charge Transfer on Photoactivity and Anomalous Luminescence Quenching of V4C3Tx/Protonated g-C3N4 Heterostructures.

Two-dimensional van der Waals heterostructures with exotic quantum phenomena have garnered a huge surge in the field of optoelectronic devices. Herein, we report spectroscopic evidence of efficient interfacial charge transfers at the interface of a novel 2D/2D V4C3Tx MXene/protonated g-C3N4 (PCN) heterostructured thin film, demonstrating robust photosensitivity and a large exciton activation energy of 139.5 meV. Through temperature-dependent photoluminescence (PL) and time-resolved PL spectroscopy, we unravel the photophysical mechanism driving efficient charge transfer and photosensitivity in V4C3Tx/PCN heterostructures. These heterostructures exhibit superior photosensitivity to white and UV light compared with either PCN or V4C3Tx pristine materials. Additionally, we observed significant PL quenching with unusual negative thermal quenching and extended charge carrier lifetime in the V4C3Tx/PCN heterostructures across a broad temperature range of 70-370 K. Notably, at the elevated temperature of 370 K, the carrier lifetime was enhanced by more than 2-fold, making the heterostructures promising for optoelectronic applications. This work provides critical insight into the charge transfer mechanism between V4C3Tx MXene and PCN, opening a new avenue for rationally designing g-C3N4-based heterostructures for highly photosensitive optoelectronic devices.

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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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