{"title":"模拟短通道效应对双栅MgZnO/ZnO hemt的影响：数值方法","authors":"K. Vinothkumar, A. Kaleel Rahuman","doi":"10.1007/s11082-025-08104-4","DOIUrl":null,"url":null,"abstract":"<div><p>The MgZnO/ZnO High Electron Mobility Transistor technology plays a vital role in radio frequency and high switching power applications. In this work, an analytical model for Double-Gate(DG) MgZnO/ZnO HEMTs is proposed to enhance carrier transport efficiency while significantly mitigating short-channel effects. The proposed DG-MgZnO/ZnO HEMT model estimates critical parameters, such as surface potential, drain-current <span>\\({(I}_{d})\\)</span>, electric field <span>\\({(E}_{f}\\)</span>), and threshold voltage <span>\\({(V}_{th}\\)</span>) for both bind and segregated gate bias voltage conditions using the variable separation method. The lateral electric field and channel potential for the front and rear gate heterointerfaces are derived using simplified analytical equations, with the results verified through simulations using the Sentaurus TCAD device simulator.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Modeling the impact of short-channel effects on double-gate MgZnO/ZnO HEMTs: a numerical approach\",\"authors\":\"K. Vinothkumar, A. Kaleel Rahuman\",\"doi\":\"10.1007/s11082-025-08104-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The MgZnO/ZnO High Electron Mobility Transistor technology plays a vital role in radio frequency and high switching power applications. In this work, an analytical model for Double-Gate(DG) MgZnO/ZnO HEMTs is proposed to enhance carrier transport efficiency while significantly mitigating short-channel effects. The proposed DG-MgZnO/ZnO HEMT model estimates critical parameters, such as surface potential, drain-current <span>\\\\({(I}_{d})\\\\)</span>, electric field <span>\\\\({(E}_{f}\\\\)</span>), and threshold voltage <span>\\\\({(V}_{th}\\\\)</span>) for both bind and segregated gate bias voltage conditions using the variable separation method. The lateral electric field and channel potential for the front and rear gate heterointerfaces are derived using simplified analytical equations, with the results verified through simulations using the Sentaurus TCAD device simulator.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"57 3\",\"pages\":\"\"},\"PeriodicalIF\":3.3000,\"publicationDate\":\"2025-03-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-025-08104-4\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08104-4","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Modeling the impact of short-channel effects on double-gate MgZnO/ZnO HEMTs: a numerical approach
The MgZnO/ZnO High Electron Mobility Transistor technology plays a vital role in radio frequency and high switching power applications. In this work, an analytical model for Double-Gate(DG) MgZnO/ZnO HEMTs is proposed to enhance carrier transport efficiency while significantly mitigating short-channel effects. The proposed DG-MgZnO/ZnO HEMT model estimates critical parameters, such as surface potential, drain-current \({(I}_{d})\), electric field \({(E}_{f}\)), and threshold voltage \({(V}_{th}\)) for both bind and segregated gate bias voltage conditions using the variable separation method. The lateral electric field and channel potential for the front and rear gate heterointerfaces are derived using simplified analytical equations, with the results verified through simulations using the Sentaurus TCAD device simulator.
期刊介绍：
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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