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IF 3.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-03-10 DOI:10.1007/s11082-025-08104-4

K. Vinothkumar, A. Kaleel Rahuman

引用次数: 0

摘要

氧化镁/氧化锌高电子迁移率晶体管技术在射频和高开关功率应用中发挥着至关重要的作用。本研究提出了双栅（DG）MgZnO/ZnO HEMT 的分析模型，以提高载流子传输效率，同时显著降低短沟道效应。所提出的 DG-MgZnO/ZnO HEMT 模型采用可变分离方法估算了结合栅和分离栅偏置电压条件下的关键参数，如表面电势、漏极电流、电场和阈值电压。前后栅异质界面的横向电场和沟道电势是通过简化的分析方程推导出来的，其结果通过使用 Sentaurus TCAD 器件模拟器进行模拟验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Modeling the impact of short-channel effects on double-gate MgZnO/ZnO HEMTs: a numerical approach

The MgZnO/ZnO High Electron Mobility Transistor technology plays a vital role in radio frequency and high switching power applications. In this work, an analytical model for Double-Gate(DG) MgZnO/ZnO HEMTs is proposed to enhance carrier transport efficiency while significantly mitigating short-channel effects. The proposed DG-MgZnO/ZnO HEMT model estimates critical parameters, such as surface potential, drain-current \({(I}_{d})\), electric field \({(E}_{f}\)), and threshold voltage \({(V}_{th}\)) for both bind and segregated gate bias voltage conditions using the variable separation method. The lateral electric field and channel potential for the front and rear gate heterointerfaces are derived using simplified analytical equations, with the results verified through simulations using the Sentaurus TCAD device simulator.

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.