Amrita Singh, Saumya Paliwal, Aditi Upadhyaya, Saral Kumar Gupta, C.M.S. Negi
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摘要

有机-无机混合卤化物包晶石(OIHPs)具有离子-电子混合传输、高丰度和低成本制造工艺等迷人特性,正在成为下一代柔性非易失性存储器系统的有力竞争者。本研究探讨了有源层退火对 FTO/溴化脒铅(FAPbBr3)/Al 器件电阻开关(RS)性能的影响。器件是在不同条件下对 FAPbBr3 层进行退火后制造的:50 °C 10 分钟(器件 D1)、60 °C 20 分钟(器件 D2)和 100 °C 30 分钟(器件 D3)。每个器件的电流-电压(I-V)特性都显示出明显的双极滞后,其中器件 D2 的滞后环最为突出。X 射线衍射 (XRD) 分析表明,器件 D2 中的 FAPbBr3 层主要含有 FABr-PbBr2-DMF 中间复合物,因此原生缺陷密度较高。缺陷密度的增加可能会增强溴离子的迁移,促进更多离子在界面的积累,从而形成明显的滞后环。我们提出了一个结合离子传输和能带调制的模型,以阐明这些器件中的电阻开关(RS)机制。电容-频率(C-f)分析进一步证实了器件 D2 的最大累积电容反映了最高的界面电荷累积。此外,器件 D2 显示出最高的离子电导率,推动了离子在界面上的迁移和积累,从而增强了 RS 行为。这项工作强调了退火在优化 RS 性能方面的关键作用,为推进基于包晶的 RS 器件技术提供了宝贵的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Role of annealing conditions on the resistive switching behavior of solution processed formamidinium lead bromide FaPbBr3 devices

Role of annealing conditions on the resistive switching behavior of solution processed formamidinium lead bromide FaPbBr3 devices
Hybrid organic-inorganic halide perovskites (OIHPs) are emerging as strong contenders for next-generation flexible nonvolatile memory systems due to their fascinating properties, including mixed ionic-electronic transport, high abundance, and cost-effective fabrication processes. This study investigates the impact of annealing the active layer on the resistive switching (RS) performance of FTO/formamidinium lead bromide (FAPbBr3)/Al devices. Devices were fabricated with the FAPbBr3 layer annealed under different conditions: 50 °C for 10 min (Device D1), 60 °C for 20 min (Device D2), and 100 °C for 30 min (Device D3). Each device displayed distinct bipolar hysteresis in current-voltage (I-V) characteristics, with Device D2 displaying the most prominent hysteresis loop. X-ray diffraction (XRD) analysis identified that the FAPbBr3 layer in Device D2 predominantly contained the FABr–PbBr2–DMF intermediate complex, resulting in a higher density of native defects. This increased defect density likely enhanced bromide ion migration, facilitating greater ionic accumulation at the interface, which contributed to the pronounced hysteresis loop. A model combining ionic transport and energy band modulation is proposed to elucidate the resistive switching (RS) mechanism in these devices. Capacitance-frequency (C–f) analysis further corroborated the highest interfacial charge accumulation for Device D2, reflected by its maximum accumulation capacitance. Additionally, the Device D2 exhibited the highest ionic conductivity, driving enhanced ion migration and accumulation at the interface, thereby enhancing the RS behavior. This work highlights the critical role of annealing in optimizing the RS performance, offering valuable insights for advancing perovskite-based RS device technologies.
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