1-20 MeV β粒子辐照铬补偿砷化镓传感器的辐射硬度计算

IF 0.4 4区物理与天体物理 Q4 PHYSICS, MULTIDISCIPLINARY

Russian Physics Journal Pub Date : 2025-01-09 DOI:10.1007/s11182-024-03358-z

A. V. Tyazhev, A. E. Vinnik, A. N. Zarubin, I. D. Chsherbakov, M. S. Skakunov, O. P. Tolbanov, L. K. Shaimerdenova, A. V. Shemeryankina, P. V. Kosmachev, S. V. Panin

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引用次数: 0

摘要

本文给出了能量为1 ~ 20 MeV的β粒子辐照的铬补偿砷化镓传感器的载流子寿命和电荷收集效率的计算结果。在1 MGy左右的辐照剂量下，传感器的电荷收集效率下降到初始值的1%。厚度减小到100-150 μm，传感器的抗辐射能力提高到2 MGy。计算结果与实验数据吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Calculation of radiation hardness of chromium-compensated gallium arsenade sensors irradiated with 1–20 MeV beta particles

The paper presents the calculation results of the charge carrier lifetime and charge collection efficiency of sensors based on chromium-compensated gallium arsenide irradiated with beta particles at the energy of 1 to 20 MeV. It is found that the charge collection efficiency decreases down to 1% of the initial value after the sensor irradiation up to doses of about 1 MGy. The thickness reduction to 100–150 μm improves the sensor radiation resistance up to 2 MGy. It is shown that calculation results are in agreement with the experimental data.

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来源期刊

Russian Physics Journal PHYSICS, MULTIDISCIPLINARY-

CiteScore

1.00

自引率

50.00%

发文量

208

审稿时长

3-6 weeks

期刊介绍： Russian Physics Journal covers the broad spectrum of specialized research in applied physics, with emphasis on work with practical applications in solid-state physics, optics, and magnetism. Particularly interesting results are reported in connection with: electroluminescence and crystal phospors; semiconductors; phase transformations in solids; superconductivity; properties of thin films; and magnetomechanical phenomena.

1-20 MeV β粒子辐照铬补偿砷化镓传感器的辐射硬度计算

摘要

1-20 MeV β粒子辐照铬补偿砷化镓传感器的辐射硬度计算