Hyeok-jin Kwon, Benliang Hou, Hong Nhung Le, Heqing Ye, Songhee Lee, Hoyoul Kong, Xiaowu Tang, Xinlin Li, Juyoung Kim, Se Hyun Kim
{"title":"非真空溶液可加工的Zr和ti功能化胶体有机/无机纳米杂化材料诱导不同介电性能和低压驱动印刷电子应用","authors":"Hyeok-jin Kwon, Benliang Hou, Hong Nhung Le, Heqing Ye, Songhee Lee, Hoyoul Kong, Xiaowu Tang, Xinlin Li, Juyoung Kim, Se Hyun Kim","doi":"10.1002/adfm.202503123","DOIUrl":null,"url":null,"abstract":"<p>Two new organic–inorganic (O–I) hybrid materials are synthesized and used as insulating layers for thin-film and fully printed electronics using non-vacuum, low-temperature processing. The O–I hybrid materials are composed of high-permittivity (high-k) oxide components, ZrO₂ and TiO₂, combined with organic three-arm structured amphiphilic components. These materials, designated as UZr and UTi, exhibited dielectric constants (k) of 12.43 and 17.33, respectively. Thin films made of both materials exhibited smooth surfaces, good insulating performance, and excellent mechanical flexibility; however, their morphologies varied depending on the specific oxide component. Thin-film transistors (TFTs) fabricated with UZr and UTi layers demonstrate outstanding electrical performances under low-voltage conditions (≈2 V). However, distinct driving/hysteresis behavior is observed owing to the differences in their morphological and dielectric properties between UZr and UTi. The variations in their dielectric behavior render these materials suitable for use in different types of devices, including transistors, memory devices, and integrated printed electronics. This straightforward synthetic strategy for producing high-k O–I hybrid materials paves a new pathway for the development of advanced materials for thin films and printed electronics.</p>","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"35 31","pages":""},"PeriodicalIF":19.0000,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Non-vacuum Solution-Processable Zr- and Ti-functionalized Colloidal Organic/Inorganic Nanohybrid Materials Inducing Different Dielectric Properties and Low-Voltage Driving Printed Electronics Applications\",\"authors\":\"Hyeok-jin Kwon, Benliang Hou, Hong Nhung Le, Heqing Ye, Songhee Lee, Hoyoul Kong, Xiaowu Tang, Xinlin Li, Juyoung Kim, Se Hyun Kim\",\"doi\":\"10.1002/adfm.202503123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Two new organic–inorganic (O–I) hybrid materials are synthesized and used as insulating layers for thin-film and fully printed electronics using non-vacuum, low-temperature processing. The O–I hybrid materials are composed of high-permittivity (high-k) oxide components, ZrO₂ and TiO₂, combined with organic three-arm structured amphiphilic components. These materials, designated as UZr and UTi, exhibited dielectric constants (k) of 12.43 and 17.33, respectively. Thin films made of both materials exhibited smooth surfaces, good insulating performance, and excellent mechanical flexibility; however, their morphologies varied depending on the specific oxide component. Thin-film transistors (TFTs) fabricated with UZr and UTi layers demonstrate outstanding electrical performances under low-voltage conditions (≈2 V). However, distinct driving/hysteresis behavior is observed owing to the differences in their morphological and dielectric properties between UZr and UTi. The variations in their dielectric behavior render these materials suitable for use in different types of devices, including transistors, memory devices, and integrated printed electronics. This straightforward synthetic strategy for producing high-k O–I hybrid materials paves a new pathway for the development of advanced materials for thin films and printed electronics.</p>\",\"PeriodicalId\":112,\"journal\":{\"name\":\"Advanced Functional Materials\",\"volume\":\"35 31\",\"pages\":\"\"},\"PeriodicalIF\":19.0000,\"publicationDate\":\"2025-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Functional Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.202503123\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Functional Materials","FirstCategoryId":"88","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.202503123","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
Non-vacuum Solution-Processable Zr- and Ti-functionalized Colloidal Organic/Inorganic Nanohybrid Materials Inducing Different Dielectric Properties and Low-Voltage Driving Printed Electronics Applications
Two new organic–inorganic (O–I) hybrid materials are synthesized and used as insulating layers for thin-film and fully printed electronics using non-vacuum, low-temperature processing. The O–I hybrid materials are composed of high-permittivity (high-k) oxide components, ZrO₂ and TiO₂, combined with organic three-arm structured amphiphilic components. These materials, designated as UZr and UTi, exhibited dielectric constants (k) of 12.43 and 17.33, respectively. Thin films made of both materials exhibited smooth surfaces, good insulating performance, and excellent mechanical flexibility; however, their morphologies varied depending on the specific oxide component. Thin-film transistors (TFTs) fabricated with UZr and UTi layers demonstrate outstanding electrical performances under low-voltage conditions (≈2 V). However, distinct driving/hysteresis behavior is observed owing to the differences in their morphological and dielectric properties between UZr and UTi. The variations in their dielectric behavior render these materials suitable for use in different types of devices, including transistors, memory devices, and integrated printed electronics. This straightforward synthetic strategy for producing high-k O–I hybrid materials paves a new pathway for the development of advanced materials for thin films and printed electronics.
期刊介绍:
Firmly established as a top-tier materials science journal, Advanced Functional Materials reports breakthrough research in all aspects of materials science, including nanotechnology, chemistry, physics, and biology every week.
Advanced Functional Materials is known for its rapid and fair peer review, quality content, and high impact, making it the first choice of the international materials science community.