非真空溶液可加工的Zr和ti功能化胶体有机/无机纳米杂化材料诱导不同介电性能和低压驱动印刷电子应用

IF 19 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY
Hyeok-jin Kwon, Benliang Hou, Hong Nhung Le, Heqing Ye, Songhee Lee, Hoyoul Kong, Xiaowu Tang, Xinlin Li, Juyoung Kim, Se Hyun Kim
{"title":"非真空溶液可加工的Zr和ti功能化胶体有机/无机纳米杂化材料诱导不同介电性能和低压驱动印刷电子应用","authors":"Hyeok-jin Kwon,&nbsp;Benliang Hou,&nbsp;Hong Nhung Le,&nbsp;Heqing Ye,&nbsp;Songhee Lee,&nbsp;Hoyoul Kong,&nbsp;Xiaowu Tang,&nbsp;Xinlin Li,&nbsp;Juyoung Kim,&nbsp;Se Hyun Kim","doi":"10.1002/adfm.202503123","DOIUrl":null,"url":null,"abstract":"<p>Two new organic–inorganic (O–I) hybrid materials are synthesized and used as insulating layers for thin-film and fully printed electronics using non-vacuum, low-temperature processing. The O–I hybrid materials are composed of high-permittivity (high-k) oxide components, ZrO₂ and TiO₂, combined with organic three-arm structured amphiphilic components. These materials, designated as UZr and UTi, exhibited dielectric constants (k) of 12.43 and 17.33, respectively. Thin films made of both materials exhibited smooth surfaces, good insulating performance, and excellent mechanical flexibility; however, their morphologies varied depending on the specific oxide component. Thin-film transistors (TFTs) fabricated with UZr and UTi layers demonstrate outstanding electrical performances under low-voltage conditions (≈2 V). However, distinct driving/hysteresis behavior is observed owing to the differences in their morphological and dielectric properties between UZr and UTi. The variations in their dielectric behavior render these materials suitable for use in different types of devices, including transistors, memory devices, and integrated printed electronics. This straightforward synthetic strategy for producing high-k O–I hybrid materials paves a new pathway for the development of advanced materials for thin films and printed electronics.</p>","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"35 31","pages":""},"PeriodicalIF":19.0000,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Non-vacuum Solution-Processable Zr- and Ti-functionalized Colloidal Organic/Inorganic Nanohybrid Materials Inducing Different Dielectric Properties and Low-Voltage Driving Printed Electronics Applications\",\"authors\":\"Hyeok-jin Kwon,&nbsp;Benliang Hou,&nbsp;Hong Nhung Le,&nbsp;Heqing Ye,&nbsp;Songhee Lee,&nbsp;Hoyoul Kong,&nbsp;Xiaowu Tang,&nbsp;Xinlin Li,&nbsp;Juyoung Kim,&nbsp;Se Hyun Kim\",\"doi\":\"10.1002/adfm.202503123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Two new organic–inorganic (O–I) hybrid materials are synthesized and used as insulating layers for thin-film and fully printed electronics using non-vacuum, low-temperature processing. The O–I hybrid materials are composed of high-permittivity (high-k) oxide components, ZrO₂ and TiO₂, combined with organic three-arm structured amphiphilic components. These materials, designated as UZr and UTi, exhibited dielectric constants (k) of 12.43 and 17.33, respectively. Thin films made of both materials exhibited smooth surfaces, good insulating performance, and excellent mechanical flexibility; however, their morphologies varied depending on the specific oxide component. Thin-film transistors (TFTs) fabricated with UZr and UTi layers demonstrate outstanding electrical performances under low-voltage conditions (≈2 V). However, distinct driving/hysteresis behavior is observed owing to the differences in their morphological and dielectric properties between UZr and UTi. The variations in their dielectric behavior render these materials suitable for use in different types of devices, including transistors, memory devices, and integrated printed electronics. This straightforward synthetic strategy for producing high-k O–I hybrid materials paves a new pathway for the development of advanced materials for thin films and printed electronics.</p>\",\"PeriodicalId\":112,\"journal\":{\"name\":\"Advanced Functional Materials\",\"volume\":\"35 31\",\"pages\":\"\"},\"PeriodicalIF\":19.0000,\"publicationDate\":\"2025-03-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Functional Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.202503123\",\"RegionNum\":1,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Functional Materials","FirstCategoryId":"88","ListUrlMain":"https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.202503123","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

合成了两种新的有机-无机(O-I)杂化材料,并使用非真空低温加工技术作为薄膜和全印刷电子产品的绝缘层。O-I杂化材料由高介电常数(高k)氧化物组分ZrO₂和TiO₂与有机三臂结构两亲性组分结合而成。这些材料分别被命名为UZr和UTi,它们的介电常数(k)分别为12.43和17.33。两种材料制成的薄膜表面光滑,绝缘性能好,机械柔韧性好;然而,它们的形态取决于特定的氧化物成分。用UZr和UTi层制备的薄膜晶体管(TFTs)在低压条件下(≈2 V)表现出优异的电性能。然而,由于UZr和UTi之间的形态和介电性质的差异,可以观察到不同的驱动/滞后行为。介电性能的变化使这些材料适用于不同类型的器件,包括晶体管、存储器件和集成印刷电子器件。这种生产高k O-I杂化材料的直接合成策略为薄膜和印刷电子先进材料的发展铺平了新的道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Non-vacuum Solution-Processable Zr- and Ti-functionalized Colloidal Organic/Inorganic Nanohybrid Materials Inducing Different Dielectric Properties and Low-Voltage Driving Printed Electronics Applications

Non-vacuum Solution-Processable Zr- and Ti-functionalized Colloidal Organic/Inorganic Nanohybrid Materials Inducing Different Dielectric Properties and Low-Voltage Driving Printed Electronics Applications

Non-vacuum Solution-Processable Zr- and Ti-functionalized Colloidal Organic/Inorganic Nanohybrid Materials Inducing Different Dielectric Properties and Low-Voltage Driving Printed Electronics Applications

Non-vacuum Solution-Processable Zr- and Ti-functionalized Colloidal Organic/Inorganic Nanohybrid Materials Inducing Different Dielectric Properties and Low-Voltage Driving Printed Electronics Applications

Non-vacuum Solution-Processable Zr- and Ti-functionalized Colloidal Organic/Inorganic Nanohybrid Materials Inducing Different Dielectric Properties and Low-Voltage Driving Printed Electronics Applications

Two new organic–inorganic (O–I) hybrid materials are synthesized and used as insulating layers for thin-film and fully printed electronics using non-vacuum, low-temperature processing. The O–I hybrid materials are composed of high-permittivity (high-k) oxide components, ZrO₂ and TiO₂, combined with organic three-arm structured amphiphilic components. These materials, designated as UZr and UTi, exhibited dielectric constants (k) of 12.43 and 17.33, respectively. Thin films made of both materials exhibited smooth surfaces, good insulating performance, and excellent mechanical flexibility; however, their morphologies varied depending on the specific oxide component. Thin-film transistors (TFTs) fabricated with UZr and UTi layers demonstrate outstanding electrical performances under low-voltage conditions (≈2 V). However, distinct driving/hysteresis behavior is observed owing to the differences in their morphological and dielectric properties between UZr and UTi. The variations in their dielectric behavior render these materials suitable for use in different types of devices, including transistors, memory devices, and integrated printed electronics. This straightforward synthetic strategy for producing high-k O–I hybrid materials paves a new pathway for the development of advanced materials for thin films and printed electronics.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Advanced Functional Materials
Advanced Functional Materials 工程技术-材料科学:综合
CiteScore
29.50
自引率
4.20%
发文量
2086
审稿时长
2.1 months
期刊介绍: Firmly established as a top-tier materials science journal, Advanced Functional Materials reports breakthrough research in all aspects of materials science, including nanotechnology, chemistry, physics, and biology every week. Advanced Functional Materials is known for its rapid and fair peer review, quality content, and high impact, making it the first choice of the international materials science community.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信