{"title":"基于非对称接触界面MoTe2同质结的高性能、宽带、自驱动光电探测器","authors":"Kangwei Shao, Zhengjin Weng, Haiyan Nan, Chuangzhang Liang, Renxian Qi, Zhangting Wu, Wenhui Wang, Jialing Jian, Shaoqing Xiao, Xiaofeng Gu","doi":"10.1063/5.0254935","DOIUrl":null,"url":null,"abstract":"The van der Waals junction of two-dimensional materials has the characteristics of weak interlayer interaction and strong light–mass interaction. The internal electric field formed at the interface of Van der Waals junction promotes the separation and efficient transfer of photogenerated carriers, showing the characteristics of low power consumption, self-drive, high responsiveness, and ultrafast response. Therefore, we fabricate a transverse homojunction photodetector by mechanical stripping. Furthermore, considering the influence of the contact between the two sides of the metal electrodes, we select the metal electrodes corresponding to the matching work function according to the Fermi level with different thicknesses of MoTe2, and two anti-barrier layers are obtained. Finally, a transverse homojunction self-driven photodetector with Au-thin MoTe2-thick MoTe2–Ni/Au structure is fabricated, which improves the photosensitivity and response time, and broadens the spectral detection range. When Vds = 0 V, the rectifier ratio increases to 4.6 × 103, which is 50 times higher than that of symmetrical electrode homojunction. Under zero bias voltage, when the spot area is 3 × 10−9 m2, the photosensitivity reaches 28 mA/W (637 nm), the response time is 38.83/40.17 μs, and the infrared detection is extended to 1550 nm. It has potential applications in optoelectronics and optical signal detection.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"85 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-performance, broadband, and self-driven photodetector based on MoTe2 homojunction with asymmetrical contact interfaces\",\"authors\":\"Kangwei Shao, Zhengjin Weng, Haiyan Nan, Chuangzhang Liang, Renxian Qi, Zhangting Wu, Wenhui Wang, Jialing Jian, Shaoqing Xiao, Xiaofeng Gu\",\"doi\":\"10.1063/5.0254935\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The van der Waals junction of two-dimensional materials has the characteristics of weak interlayer interaction and strong light–mass interaction. The internal electric field formed at the interface of Van der Waals junction promotes the separation and efficient transfer of photogenerated carriers, showing the characteristics of low power consumption, self-drive, high responsiveness, and ultrafast response. Therefore, we fabricate a transverse homojunction photodetector by mechanical stripping. Furthermore, considering the influence of the contact between the two sides of the metal electrodes, we select the metal electrodes corresponding to the matching work function according to the Fermi level with different thicknesses of MoTe2, and two anti-barrier layers are obtained. Finally, a transverse homojunction self-driven photodetector with Au-thin MoTe2-thick MoTe2–Ni/Au structure is fabricated, which improves the photosensitivity and response time, and broadens the spectral detection range. When Vds = 0 V, the rectifier ratio increases to 4.6 × 103, which is 50 times higher than that of symmetrical electrode homojunction. Under zero bias voltage, when the spot area is 3 × 10−9 m2, the photosensitivity reaches 28 mA/W (637 nm), the response time is 38.83/40.17 μs, and the infrared detection is extended to 1550 nm. It has potential applications in optoelectronics and optical signal detection.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"85 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0254935\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0254935","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
High-performance, broadband, and self-driven photodetector based on MoTe2 homojunction with asymmetrical contact interfaces
The van der Waals junction of two-dimensional materials has the characteristics of weak interlayer interaction and strong light–mass interaction. The internal electric field formed at the interface of Van der Waals junction promotes the separation and efficient transfer of photogenerated carriers, showing the characteristics of low power consumption, self-drive, high responsiveness, and ultrafast response. Therefore, we fabricate a transverse homojunction photodetector by mechanical stripping. Furthermore, considering the influence of the contact between the two sides of the metal electrodes, we select the metal electrodes corresponding to the matching work function according to the Fermi level with different thicknesses of MoTe2, and two anti-barrier layers are obtained. Finally, a transverse homojunction self-driven photodetector with Au-thin MoTe2-thick MoTe2–Ni/Au structure is fabricated, which improves the photosensitivity and response time, and broadens the spectral detection range. When Vds = 0 V, the rectifier ratio increases to 4.6 × 103, which is 50 times higher than that of symmetrical electrode homojunction. Under zero bias voltage, when the spot area is 3 × 10−9 m2, the photosensitivity reaches 28 mA/W (637 nm), the response time is 38.83/40.17 μs, and the infrared detection is extended to 1550 nm. It has potential applications in optoelectronics and optical signal detection.
期刊介绍:
Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology.
In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics.
APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field.
Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.