Hyeok Yun, Soyeong Heo, Jiyoung Bang, Minyeob Kim, Hyung-Bae Moon, Siwoo Noh, Geonhwa Kim, Hee-Seon Lee, Kyuyoung Heo, Sangsul Lee, Ki-Jeong Kim, Cheol-Min Kim, Hyun-Dam Jeong
{"title":"非烷基锡氧簇的合成、表征及其在EUV光刻中高吸收系数耐蚀无机抗蚀剂的应用","authors":"Hyeok Yun, Soyeong Heo, Jiyoung Bang, Minyeob Kim, Hyung-Bae Moon, Siwoo Noh, Geonhwa Kim, Hee-Seon Lee, Kyuyoung Heo, Sangsul Lee, Ki-Jeong Kim, Cheol-Min Kim, Hyun-Dam Jeong","doi":"10.1021/acs.inorgchem.5c00495","DOIUrl":null,"url":null,"abstract":"We introduce a novel nonalkyl tin oxo cluster, CNU-TOC-01(4C–C), synthesized through a reflux-based solution reaction using SnCl<sub>2</sub>, H<sub>2</sub>O, and pyrazole, which permits scalable production and molecular customization. Using field desorption-time-of-flight mass spectrometry (FD-TOF MS) and small-angle X-ray scattering (SAXS), CNU-TOC-01(4C–C) is characterized as a cyclic cluster with the molecular formula Sn<sub>4</sub>Cl<sub>3</sub>(C<sub>3</sub>N<sub>2</sub>H<sub>4</sub>)(C<sub>3</sub>N<sub>2</sub>H<sub>3</sub>)H<sub>4</sub>O<sub>8</sub>. The cluster size was measured to be 11.6 Å by SAXS and estimated to be 11.1 Å lengthwise in quantum chemical calculation. The synthesized material exhibits an extreme ultraviolet (EUV) linear absorption coefficient of 20.7 μm<sup>–1</sup>. Initial application in EUVL and electron beam lithography (EBL) achieved fine line and space patterns with the potential for ultrafine resolutions upon optimization. CNU-TOC-01(4C–C)’s high etch resistance underscores its exceptional suitability as an advanced resist material for future lithographic applications.","PeriodicalId":40,"journal":{"name":"Inorganic Chemistry","volume":"36 1","pages":""},"PeriodicalIF":4.7000,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Synthesis and Characterizations of a Nonalkyl Tin Oxo Cluster and its Application as High EUV Absorption Coefficient and Etch Resistant Inorganic Resist for EUV Lithography\",\"authors\":\"Hyeok Yun, Soyeong Heo, Jiyoung Bang, Minyeob Kim, Hyung-Bae Moon, Siwoo Noh, Geonhwa Kim, Hee-Seon Lee, Kyuyoung Heo, Sangsul Lee, Ki-Jeong Kim, Cheol-Min Kim, Hyun-Dam Jeong\",\"doi\":\"10.1021/acs.inorgchem.5c00495\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We introduce a novel nonalkyl tin oxo cluster, CNU-TOC-01(4C–C), synthesized through a reflux-based solution reaction using SnCl<sub>2</sub>, H<sub>2</sub>O, and pyrazole, which permits scalable production and molecular customization. Using field desorption-time-of-flight mass spectrometry (FD-TOF MS) and small-angle X-ray scattering (SAXS), CNU-TOC-01(4C–C) is characterized as a cyclic cluster with the molecular formula Sn<sub>4</sub>Cl<sub>3</sub>(C<sub>3</sub>N<sub>2</sub>H<sub>4</sub>)(C<sub>3</sub>N<sub>2</sub>H<sub>3</sub>)H<sub>4</sub>O<sub>8</sub>. The cluster size was measured to be 11.6 Å by SAXS and estimated to be 11.1 Å lengthwise in quantum chemical calculation. The synthesized material exhibits an extreme ultraviolet (EUV) linear absorption coefficient of 20.7 μm<sup>–1</sup>. Initial application in EUVL and electron beam lithography (EBL) achieved fine line and space patterns with the potential for ultrafine resolutions upon optimization. CNU-TOC-01(4C–C)’s high etch resistance underscores its exceptional suitability as an advanced resist material for future lithographic applications.\",\"PeriodicalId\":40,\"journal\":{\"name\":\"Inorganic Chemistry\",\"volume\":\"36 1\",\"pages\":\"\"},\"PeriodicalIF\":4.7000,\"publicationDate\":\"2025-03-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Inorganic Chemistry\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://doi.org/10.1021/acs.inorgchem.5c00495\",\"RegionNum\":2,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, INORGANIC & NUCLEAR\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Inorganic Chemistry","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1021/acs.inorgchem.5c00495","RegionNum":2,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
Synthesis and Characterizations of a Nonalkyl Tin Oxo Cluster and its Application as High EUV Absorption Coefficient and Etch Resistant Inorganic Resist for EUV Lithography
We introduce a novel nonalkyl tin oxo cluster, CNU-TOC-01(4C–C), synthesized through a reflux-based solution reaction using SnCl2, H2O, and pyrazole, which permits scalable production and molecular customization. Using field desorption-time-of-flight mass spectrometry (FD-TOF MS) and small-angle X-ray scattering (SAXS), CNU-TOC-01(4C–C) is characterized as a cyclic cluster with the molecular formula Sn4Cl3(C3N2H4)(C3N2H3)H4O8. The cluster size was measured to be 11.6 Å by SAXS and estimated to be 11.1 Å lengthwise in quantum chemical calculation. The synthesized material exhibits an extreme ultraviolet (EUV) linear absorption coefficient of 20.7 μm–1. Initial application in EUVL and electron beam lithography (EBL) achieved fine line and space patterns with the potential for ultrafine resolutions upon optimization. CNU-TOC-01(4C–C)’s high etch resistance underscores its exceptional suitability as an advanced resist material for future lithographic applications.
期刊介绍:
Inorganic Chemistry publishes fundamental studies in all phases of inorganic chemistry. Coverage includes experimental and theoretical reports on quantitative studies of structure and thermodynamics, kinetics, mechanisms of inorganic reactions, bioinorganic chemistry, and relevant aspects of organometallic chemistry, solid-state phenomena, and chemical bonding theory. Emphasis is placed on the synthesis, structure, thermodynamics, reactivity, spectroscopy, and bonding properties of significant new and known compounds.