Electronic respond of Au/n-Si Schottky barrier diodes with PVP interlayer doped by Nd2O3 particles

This study looks at the effects of neodymium oxide (Nd₂O₃) nanoparticles doped in the polyvinyl pyrrolidone (PVP) thin film that sits between a metal and a semiconductor on the electrical characteristics and conduction mechanism of Schottky Barrier Diodes (SBDs). A microwave-assisted technique is employed to create the Nd₂O₃ nanostructure. The processed Nd₂O₃ nanostructure’s mean crystalline scale, surface morphology, pureness, and optical characteristics are ascertained by X-ray diffraction pattern, Field Emission-Scanning Electron Microscopy, Electron-Dispersive X-ray analysis, and ultraviolet–visible spectroscopy, respectively. By measuring the I–V characteristics at ± 3.8 V and comparing them, the Thermionic Emission, modified Norde technique, and Cheung functions are applied for calculating the main electronic variables of prepared SBDs including the ideality coefficient (n), leak current (I₀), the height measure of electric potential barrier (\({\Phi }_{B0}\)), shunt (R_sh), and series (R_s) resistances. Additionally, the conduction processes of the electric current in positive and negative biases are examined, as well as the surface/trap states density (N_ss) depend on energy at forward bias. It is found that the interfacial layer improves the rectifying ratio by decreasing n, I₀, N_ss and raising BH, shunt resistance (R_sh). For use in nanoscale electrical and optoelectronic devices and circuits, PVP:Nd₂O₃ thin film can therefore be a good substitute for an interfacial layer.