基于cvd生长的MoS 2单层的水中超灵敏Hg²+离子传感

IF 4.3 2区 综合性期刊 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC
Sumit Chaudhary;Chandrabhan Patel;Brahmadutta Mahapatra;Mayank Dubey;Vikash Kumar Verma;Pawan Kumar;Rajour Tanyi Ako;Sharath Sriram;Shaibal Mukherjee
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引用次数: 0

摘要

汞(Hg)被广泛认为是最危险的重金属之一,即使是微量的。它的存在带来慢性和急性中毒的风险,导致严重的健康问题,包括癌症、神经损伤、肢痛和运动障碍,最终可能导致死亡。目前的汞感测装置有几个缺点,包括响应时间慢、成本高、便携性有限。在这项研究中,我们提出了一种以二硫化钼(MoS2)为传感层的交叉式电极传感器,用于检测痕量的有毒汞离子。利用化学气相沉积(CVD)系统合成了MoS2层,并通过能量辅助湿转移方法转移到交叉装置上。综合表征证实了成功的合成和转移到IDE器件上。该传感器对Hg $^{{2}+}$离子具有优异的选择性,检测限为27.9万亿分之一(ppt),灵敏度为$957~\mu $ a /ppb,响应时间小于4 s。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CVD-Grown MoS₂ Monolayer-Based Ultrasensitive Hg²+ Ion Sensing in Water
Mercury (Hg) is widely acknowledged as one of the most hazardous heavy metals, even in trace amounts. Its presence poses the risks of both chronic and acute poisoning, leading to serious health issues, including cancer, nerve damage, acrodynia, and movement disorders, which can ultimately result in fatalities. Current mercury sensing devices have several disadvantages, including sluggish response times, high cost, and limited portability. In this study, we present an interdigitated electrode-based sensor with molybdenum disulfide (MoS2) as the sensing layer to detect trace amounts of toxic Hg $^{{2}+}$ ions. The MoS2 layer has been synthesized using a chemical vapor deposition (CVD) system and transferred to the interdigitated device through an energy-assisted wet transfer method. Comprehensive characterizations have confirmed the successful synthesis and transfer onto the IDE device. The fabricated sensor exhibits remarkable performance with excellent selectivity toward Hg $^{{2}+}$ ions, an impressive limit of detection of 27.9 part per trillion (ppt), a remarkable sensitivity of $957~\mu $ A/ppb, and a quick response time of less than 4 s.
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来源期刊
IEEE Sensors Journal
IEEE Sensors Journal 工程技术-工程:电子与电气
CiteScore
7.70
自引率
14.00%
发文量
2058
审稿时长
5.2 months
期刊介绍: The fields of interest of the IEEE Sensors Journal are the theory, design , fabrication, manufacturing and applications of devices for sensing and transducing physical, chemical and biological phenomena, with emphasis on the electronics and physics aspect of sensors and integrated sensors-actuators. IEEE Sensors Journal deals with the following: -Sensor Phenomenology, Modelling, and Evaluation -Sensor Materials, Processing, and Fabrication -Chemical and Gas Sensors -Microfluidics and Biosensors -Optical Sensors -Physical Sensors: Temperature, Mechanical, Magnetic, and others -Acoustic and Ultrasonic Sensors -Sensor Packaging -Sensor Networks -Sensor Applications -Sensor Systems: Signals, Processing, and Interfaces -Actuators and Sensor Power Systems -Sensor Signal Processing for high precision and stability (amplification, filtering, linearization, modulation/demodulation) and under harsh conditions (EMC, radiation, humidity, temperature); energy consumption/harvesting -Sensor Data Processing (soft computing with sensor data, e.g., pattern recognition, machine learning, evolutionary computation; sensor data fusion, processing of wave e.g., electromagnetic and acoustic; and non-wave, e.g., chemical, gravity, particle, thermal, radiative and non-radiative sensor data, detection, estimation and classification based on sensor data) -Sensors in Industrial Practice
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