探讨厚度对铁磁Gd-Fe薄膜磁化反转机理和畴态构型的影响

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Saroj Kumar Mishra, Nalin Prashant Poddar, J. Arout Chelvane, J. Mohanty
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引用次数: 0

摘要

本文利用一阶反转曲线(FORC)和磁光克尔效应(MOKE)深入研究了厚度对Gd-Fe薄膜磁化反转机制和磁畴态相互作用的影响。结构分析表明,在非晶Gd-Fe基体上形成了铁纳米晶结构。磁化测量在所有薄膜上都具有很强的平面内磁各向异性。通过二维等高线图的IP FORC研究表明,随着厚度从10 nm增加到60 nm,从强相互作用的多畴(MD)状态明显转变为弱相互作用的MD和单畴(SD)状态。开关场分布分析表明,随着厚度的增加,晶粒间相互作用增强,峰展宽。MOKE测量结果显示,在10nm薄膜中出现了从之形壁到交扎壁的转变,在30nm薄膜中观察到波纹状畴壁,表明磁化反转主要由MD态控制。相反,在40和60 nm薄膜中观察到从交替带域到SD态的转变。畴型的角度变化证实了畴壁的成核和扩展主导了反转机制。通过微磁仿真验证和支持实验结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Exploring thickness effects on magnetization reversal mechanism and domain state configuration in ferrimagnetic Gd–Fe thin film

This paper provides an in-depth investigation of thickness effects on magnetization reversal mechanism and magnetic domain state interactions in Gd–Fe thin films using the first-order reversal curve (FORC) and Magneto-optic Kerr effect (MOKE). Structural analysis reveals the formation of Fe nanocrystalline structures over the amorphous Gd–Fe matrix. Magnetization measurements possess a strong in-plane (IP) magnetic anisotropy across all films. The IP FORC investigations through 2D contour plots show a clear transition from a strongly interacting multi-domain (MD) state to a weakly interacting MD and single-domain (SD) state as thickness increases from 10 to 60 nm. Analysis of switching field distribution indicates a peak broadening with enhanced inter-grain interactions on increasing thickness. The MOKE measurements show a transition from zigzag walls to cross-tie walls in the 10 nm film, and ripple-like domain walls are observed in the 30 nm film, suggesting magnetization reversal is primarily governed by MD states. In contrast, a transition from alternating band domains to SD state is observed in the 40 and 60 nm films. Angular variations in the domain pattern confirm that the nucleation and propagation of domain walls predominantly govern the reversal mechanism. Micromagnetic simulations were conducted to validate and support the experimental results.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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