{"title":"基于CdS/Ge 2D/3D型异质结光电探测器的自供电宽带计算成像","authors":"Xiaodi Luo, Jiahao Li, Zixin He, Xiaofei Ma, Qinggang Qin, Wei Chen, Zhengyu Xu, Zhifan Qiu, Yingjian Wang, Liang Li, Dongfeng Shi","doi":"10.1002/adpr.202400190","DOIUrl":null,"url":null,"abstract":"<p>The breakthrough in van der Waals heterojunction diodes composed of 2D and 3D materials for optoelectronic devices has paved the way for advancements in broadband optical imaging. However, fabricating traditional array-based imaging detectors with these materials remains challenging. Cadmium sulfide (CdS), a historically significant semiconductor material, has been extensively used in optoelectronic devices due to its remarkable photoelectric properties and chemical stability. Notably, a unique type-I heterojunction can be formed by combining 2D CdS, prepared through chemical vapor deposition, with the first-generation semiconductor germanium (Ge). His heterojunction photodetector exhibits outstanding photoelectric performance, achieving a responsivity of 54 mA W<sup>−1</sup> and a detectivity of 1.4 × 10<sup>9</sup> Jones under zero bias, with a spectral response range spanning from 265 to 1550 nm. Herein, the CdS/Ge heterojunction photodetector with the emerging single-pixel Hadamard algorithm, addressing challenges in nonvisible imaging that conventional imaging systems traditionally encounter, is integrated. This approach facilitates low-sampling-rate image reconstruction across a broad spectral range and under scattering conditions. It is anticipated that this work will significantly contribute to future advancements in broadband imaging applications.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 3","pages":""},"PeriodicalIF":3.7000,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400190","citationCount":"0","resultStr":"{\"title\":\"Self-Powered Broadband Computational Imaging Based on CdS/Ge 2D/3D Type-I Heterojunction Photodetectors\",\"authors\":\"Xiaodi Luo, Jiahao Li, Zixin He, Xiaofei Ma, Qinggang Qin, Wei Chen, Zhengyu Xu, Zhifan Qiu, Yingjian Wang, Liang Li, Dongfeng Shi\",\"doi\":\"10.1002/adpr.202400190\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The breakthrough in van der Waals heterojunction diodes composed of 2D and 3D materials for optoelectronic devices has paved the way for advancements in broadband optical imaging. However, fabricating traditional array-based imaging detectors with these materials remains challenging. Cadmium sulfide (CdS), a historically significant semiconductor material, has been extensively used in optoelectronic devices due to its remarkable photoelectric properties and chemical stability. Notably, a unique type-I heterojunction can be formed by combining 2D CdS, prepared through chemical vapor deposition, with the first-generation semiconductor germanium (Ge). His heterojunction photodetector exhibits outstanding photoelectric performance, achieving a responsivity of 54 mA W<sup>−1</sup> and a detectivity of 1.4 × 10<sup>9</sup> Jones under zero bias, with a spectral response range spanning from 265 to 1550 nm. Herein, the CdS/Ge heterojunction photodetector with the emerging single-pixel Hadamard algorithm, addressing challenges in nonvisible imaging that conventional imaging systems traditionally encounter, is integrated. This approach facilitates low-sampling-rate image reconstruction across a broad spectral range and under scattering conditions. It is anticipated that this work will significantly contribute to future advancements in broadband imaging applications.</p>\",\"PeriodicalId\":7263,\"journal\":{\"name\":\"Advanced Photonics Research\",\"volume\":\"6 3\",\"pages\":\"\"},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2025-02-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400190\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Photonics Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202400190\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Photonics Research","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202400190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
用于光电器件的二维和三维材料组成的范德华异质结二极管的突破为宽带光学成像的进步铺平了道路。然而,用这些材料制造传统的基于阵列的成像探测器仍然具有挑战性。硫化镉(cd)是一种具有重要历史意义的半导体材料,由于其优异的光电性能和化学稳定性,被广泛应用于光电子器件中。值得注意的是,通过化学气相沉积制备的2D CdS与第一代半导体锗(Ge)结合,可以形成独特的i型异质结。他的异质结光电探测器具有出色的光电性能,在零偏置下的响应率为54 mA W−1,探测率为1.4 × 109 Jones,光谱响应范围为265 ~ 1550 nm。本文将CdS/Ge异质结光电探测器与新兴的单像素Hadamard算法集成在一起,解决了传统成像系统传统上遇到的非可见光成像挑战。这种方法有助于在宽光谱范围和散射条件下的低采样率图像重建。预计这项工作将对宽带成像应用的未来发展做出重大贡献。
Self-Powered Broadband Computational Imaging Based on CdS/Ge 2D/3D Type-I Heterojunction Photodetectors
The breakthrough in van der Waals heterojunction diodes composed of 2D and 3D materials for optoelectronic devices has paved the way for advancements in broadband optical imaging. However, fabricating traditional array-based imaging detectors with these materials remains challenging. Cadmium sulfide (CdS), a historically significant semiconductor material, has been extensively used in optoelectronic devices due to its remarkable photoelectric properties and chemical stability. Notably, a unique type-I heterojunction can be formed by combining 2D CdS, prepared through chemical vapor deposition, with the first-generation semiconductor germanium (Ge). His heterojunction photodetector exhibits outstanding photoelectric performance, achieving a responsivity of 54 mA W−1 and a detectivity of 1.4 × 109 Jones under zero bias, with a spectral response range spanning from 265 to 1550 nm. Herein, the CdS/Ge heterojunction photodetector with the emerging single-pixel Hadamard algorithm, addressing challenges in nonvisible imaging that conventional imaging systems traditionally encounter, is integrated. This approach facilitates low-sampling-rate image reconstruction across a broad spectral range and under scattering conditions. It is anticipated that this work will significantly contribute to future advancements in broadband imaging applications.