无氩气氛镁热法生产硅的糖果模技术

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2025-01-30 DOI:10.1007/s12633-025-03231-9
Sigit Dwi Yudanto, Septian Adi Chandra, Rahadian Roberto, Nurhayati Indah Ciptasari, Eni Febriana, Muhammad Yunan Hasbi, Tony Kristiantoro, Bintang Adjiantoro
{"title":"无氩气氛镁热法生产硅的糖果模技术","authors":"Sigit Dwi Yudanto,&nbsp;Septian Adi Chandra,&nbsp;Rahadian Roberto,&nbsp;Nurhayati Indah Ciptasari,&nbsp;Eni Febriana,&nbsp;Muhammad Yunan Hasbi,&nbsp;Tony Kristiantoro,&nbsp;Bintang Adjiantoro","doi":"10.1007/s12633-025-03231-9","DOIUrl":null,"url":null,"abstract":"<div><p>Silicon is a material that plays a significant role in the electronics industry as a semiconductor material. Silica, which is commonly known as silicon dioxide, is present in nature. The separation of silicon from its oxide is achieved through the magnesiothermic reduction. In the current research, we report our success using the magnesiothermic method to reduce the silica (SiO<sub>2</sub>) at temperatures below the melting point of magnesium. Both powders with molar ratio of Mg:SiO<sub>2</sub> = 1:2 are mechanically ground and then sealed in the stainless-steel tube. The silica reduction process was analyzed using an X-ray diffractometer at various heating temperatures (400, 500, 600, and 700 °C) in an argon-free atmosphere. When heated at temperature of 500 °C, we found that silicon began to separate at around 19 wt.%, according to the results of quantitative analysis. After eliminating magnesium oxide from selected samples using a leaching process, 90 wt.% of crystalline silicon was obtained. Further evidence of silicon reduction from the reaction of magnesium and SiO<sub>2</sub> is provided by a shift in the Raman spectroscopy peak from 462 cm<sup>−1</sup> to 517 cm<sup>−1</sup> for samples heated at 400 °C and 500 °C. Consequently, it can be stated that this method of reducing silica at low temperatures can be applied without requiring the use of argon gas during the heating process.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"17 4","pages":"755 - 763"},"PeriodicalIF":2.8000,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Candy-Mold Technique in An Argon-Free Atmosphere Magnesiothermic Process for Producing Silicon\",\"authors\":\"Sigit Dwi Yudanto,&nbsp;Septian Adi Chandra,&nbsp;Rahadian Roberto,&nbsp;Nurhayati Indah Ciptasari,&nbsp;Eni Febriana,&nbsp;Muhammad Yunan Hasbi,&nbsp;Tony Kristiantoro,&nbsp;Bintang Adjiantoro\",\"doi\":\"10.1007/s12633-025-03231-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Silicon is a material that plays a significant role in the electronics industry as a semiconductor material. Silica, which is commonly known as silicon dioxide, is present in nature. The separation of silicon from its oxide is achieved through the magnesiothermic reduction. In the current research, we report our success using the magnesiothermic method to reduce the silica (SiO<sub>2</sub>) at temperatures below the melting point of magnesium. Both powders with molar ratio of Mg:SiO<sub>2</sub> = 1:2 are mechanically ground and then sealed in the stainless-steel tube. The silica reduction process was analyzed using an X-ray diffractometer at various heating temperatures (400, 500, 600, and 700 °C) in an argon-free atmosphere. When heated at temperature of 500 °C, we found that silicon began to separate at around 19 wt.%, according to the results of quantitative analysis. After eliminating magnesium oxide from selected samples using a leaching process, 90 wt.% of crystalline silicon was obtained. Further evidence of silicon reduction from the reaction of magnesium and SiO<sub>2</sub> is provided by a shift in the Raman spectroscopy peak from 462 cm<sup>−1</sup> to 517 cm<sup>−1</sup> for samples heated at 400 °C and 500 °C. Consequently, it can be stated that this method of reducing silica at low temperatures can be applied without requiring the use of argon gas during the heating process.</p></div>\",\"PeriodicalId\":776,\"journal\":{\"name\":\"Silicon\",\"volume\":\"17 4\",\"pages\":\"755 - 763\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-01-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Silicon\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s12633-025-03231-9\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, PHYSICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-025-03231-9","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

摘要

硅作为半导体材料在电子工业中起着重要的作用。二氧化硅,俗称二氧化硅,存在于自然界中。硅与氧化物的分离是通过镁热还原实现的。在目前的研究中,我们报告了我们成功地使用镁热法在低于镁熔点的温度下还原二氧化硅(SiO2)。两种粉末的摩尔比为Mg:SiO2 = 1:2,通过机械研磨,然后密封在不锈钢管中。利用x射线衍射仪分析了在无氩气氛中不同加热温度(400、500、600和700℃)下二氧化硅还原过程。当在500℃的温度下加热时,根据定量分析的结果,我们发现硅在19 wt.%左右开始分离。在用浸出法从选定的样品中除去氧化镁后,获得了90 wt.%的晶体硅。在400°C和500°C加热的样品中,拉曼光谱峰从462 cm−1到517 cm−1的变化提供了镁和SiO2反应中硅还原的进一步证据。因此,可以这样说,这种在低温下还原二氧化硅的方法可以在加热过程中不需要使用氩气。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Candy-Mold Technique in An Argon-Free Atmosphere Magnesiothermic Process for Producing Silicon

Silicon is a material that plays a significant role in the electronics industry as a semiconductor material. Silica, which is commonly known as silicon dioxide, is present in nature. The separation of silicon from its oxide is achieved through the magnesiothermic reduction. In the current research, we report our success using the magnesiothermic method to reduce the silica (SiO2) at temperatures below the melting point of magnesium. Both powders with molar ratio of Mg:SiO2 = 1:2 are mechanically ground and then sealed in the stainless-steel tube. The silica reduction process was analyzed using an X-ray diffractometer at various heating temperatures (400, 500, 600, and 700 °C) in an argon-free atmosphere. When heated at temperature of 500 °C, we found that silicon began to separate at around 19 wt.%, according to the results of quantitative analysis. After eliminating magnesium oxide from selected samples using a leaching process, 90 wt.% of crystalline silicon was obtained. Further evidence of silicon reduction from the reaction of magnesium and SiO2 is provided by a shift in the Raman spectroscopy peak from 462 cm−1 to 517 cm−1 for samples heated at 400 °C and 500 °C. Consequently, it can be stated that this method of reducing silica at low temperatures can be applied without requiring the use of argon gas during the heating process.

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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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