辐射刺激生长硅单晶杂质相态间氧原子的转变

IF 2.8 3区材料科学 Q3 CHEMISTRY, PHYSICAL

Silicon Pub Date : 2025-02-14 DOI:10.1007/s12633-025-03239-1

Mahmud Kalanov, Ilkham Sadikov, Shavkat Malikov, Avas Khugaev, Abror Korakhodjaev, Amin Saidov, Shukrillo Usmonov, Dadajan Saparov

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引用次数: 0

摘要

X 射线衍射法证实了在用 Czochralski 法生长的硅单晶中存在氧的三相态：沿基体晶格间隙以 "准分子 "形式自由溶解的态--SiO2；在样品体积中以结晶二氧化硅--SiO2(c)组成的沉淀态；在单晶表面以二氧化硅--SiO2(a)的无定形形式存在的态。在辐射的刺激下，单晶体中的氧原子在溶解态和晶体杂质态之间发生了转变。提出了生长硅单晶的固有（类金刚石）晶体结构在中子辐照下保持稳定的新物理机制。

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Radiation-Stimulated Transformation of Cxygen Atoms Between Impurity Phase States of A Growing Silicon Single Crystal

The X-ray diffraction method confirmed the presence of a three-phase state of oxygen in a growing single crystal of silicon grown by the Czochralski method: a state freely dissolved along the interstices of the matrix lattice in the form of “quasi-molecules”—SiO₂ and a precipitate state in the composition of crystalline silicon dioxide—SiO₂(c) in the volume of the sample, and on surface of a single crystal in the amorphous form of dioxide – SiO₂(a). The radiation-stimulated transformation of oxygen atoms between dissolved and crystalline impurity phase states of oxygen in the bulk of a single crystal has been established. A new physical mechanism for the stability of the intrinsic (diamond-like) crystal structure of a growth silicon single crystal to neutron irradiation is proposed.

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来源期刊

Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

5.90

自引率

20.60%

发文量

685

审稿时长

>12 weeks

期刊介绍： The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.