利用金属镍催化将前驱体生成的碳化硅中的残余碳转化为碳纳米管及其机理分析

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL
Silicon Pub Date : 2025-02-08 DOI:10.1007/s12633-025-03245-3
Luke Ma, Yanyan Deng, Xueliang Pei, Zhengren Huang, Qing Huang
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引用次数: 0

摘要

前驱体转化是制备碳化硅陶瓷的主要方法。然而,这种方法通常会导致SiC陶瓷中不可避免的残余碳,从而严重影响其性能。在这项研究中,我们利用纳米金属Ni来排出前驱体衍生的SiC中的残余碳,并将其转化为碳纳米管(CNTs)。在热解阶段,金属Ni转化为Ni2Si,催化形成CNTs。虽然在400 ~ 700℃热解范围内释放气态烃化合物(CH4、C2H4和C3H5),但CNTs的碳源既来自前体衍生SiC中的残余碳,也来自金属Ni与SiC反应后的副产物碳。残余的非晶碳转化为碳纳米管有利于前驱体衍生碳化硅的结晶。此外,金属Ni的引入有利于提高前驱体衍生SiC的导热性和导电性。根据CNTs的碳源和生长现象,推断出CNTs的生长方式。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Catalytic Conversion of Residual Carbon in Precursor-Derived SiC into Carbon Nanotubes Using Metal Nickel and Mechanism Analysis

Precursor conversion is a primary method for preparing SiC ceramics. However, this approach typically results in unavoidable residual carbon in SiC ceramics, which significantly affects their properties. In this study, we utilized nano metal Ni to exhaust residual carbon in precursor-derived SiC and transformed it into carbon nanotubes (CNTs). During the pyrolysis stage, the metal Ni converted into Ni2Si, which catalyzed the formation of CNTs. Although gaseous hydrocarbon compounds (CH4, C2H4 and C3H5) were released in the pyrolysis range of 400–700 °C, the carbon source of CNTs originated from both the residual carbon in the precursor-derived SiC and the carbon byproduct after the reaction between metal Ni and SiC. The conversion of residual amorphous carbon into CNTs facilitated the crystallization of precursor-derived SiC. In addition, the introduction of metal Ni was beneficial for improving the thermal conductivity and electrical conductivity of precursor-derived SiC. Based on the carbon source and growth phenomenon of CNTs, the growth mode of CNTs has also been inferred.

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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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