具有电流增益的微型发光三极管LTPS和a-Si TFT像素电路的研究

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-02-26 DOI:10.1016/j.mejo.2025.106615

Keren Wang , Jinyu Ye , Wenjuan Su , Yibin Lin , Xiongtu Zhou , Jianpu Lin , Tailiang Guo , Chaoxing Wu , Yongai Zhang

{"title":"具有电流增益的微型发光三极管LTPS和a-Si TFT像素电路的研究","authors":"Keren Wang , Jinyu Ye , Wenjuan Su , Yibin Lin , Xiongtu Zhou , Jianpu Lin , Tailiang Guo , Chaoxing Wu , Yongai Zhang","doi":"10.1016/j.mejo.2025.106615","DOIUrl":null,"url":null,"abstract":"<div><div>The driving capability of Micro-LED displays based on thin film transistor (TFT) often falls short due to limited TFT current output performance. In this study, we propose a 6T2C pixel circuit for micro light-emitting-triode (Micro-LET), which integrates GaN-based LED and bipolar junction transistor (BJT) in a single chip vertically. The proposed pixel circuit, utilizing low-temperature polysilicon (LTPS) TFT, effectively compensates for threshold voltage shifts and mobility variations, thereby addressing the issue of pixel non-uniformity. Circuit simulation results demonstrate that the current error rates (CER) of the emission current are less than 4.71 % and 1.83 %, respectively, when subjected to ±0.5 V threshold voltage change and ±30 % mobility variation. Furthermore, the LTPS TFT can be extended to amorphous silicon (a-Si) TFT in the pixel circuit, showcasing its potential in enabling high-brightness Micro-LED displays driven by a-Si TFT technology with current amplification capabilities. These findings validate the feasibility of cost-effective and highly luminous Micro-LED displays while also alleviating concerns regarding overcapacity issues associated with a-Si TFT.</div></div>","PeriodicalId":49818,"journal":{"name":"Microelectronics Journal","volume":"158 ","pages":"Article 106615"},"PeriodicalIF":1.9000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation of LTPS and a-Si TFT pixel circuit for micro-light-emitting-triode with current gain\",\"authors\":\"Keren Wang , Jinyu Ye , Wenjuan Su , Yibin Lin , Xiongtu Zhou , Jianpu Lin , Tailiang Guo , Chaoxing Wu , Yongai Zhang\",\"doi\":\"10.1016/j.mejo.2025.106615\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The driving capability of Micro-LED displays based on thin film transistor (TFT) often falls short due to limited TFT current output performance. In this study, we propose a 6T2C pixel circuit for micro light-emitting-triode (Micro-LET), which integrates GaN-based LED and bipolar junction transistor (BJT) in a single chip vertically. The proposed pixel circuit, utilizing low-temperature polysilicon (LTPS) TFT, effectively compensates for threshold voltage shifts and mobility variations, thereby addressing the issue of pixel non-uniformity. Circuit simulation results demonstrate that the current error rates (CER) of the emission current are less than 4.71 % and 1.83 %, respectively, when subjected to ±0.5 V threshold voltage change and ±30 % mobility variation. Furthermore, the LTPS TFT can be extended to amorphous silicon (a-Si) TFT in the pixel circuit, showcasing its potential in enabling high-brightness Micro-LED displays driven by a-Si TFT technology with current amplification capabilities. These findings validate the feasibility of cost-effective and highly luminous Micro-LED displays while also alleviating concerns regarding overcapacity issues associated with a-Si TFT.</div></div>\",\"PeriodicalId\":49818,\"journal\":{\"name\":\"Microelectronics Journal\",\"volume\":\"158 \",\"pages\":\"Article 106615\"},\"PeriodicalIF\":1.9000,\"publicationDate\":\"2025-02-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1879239125000645\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1879239125000645","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

基于薄膜晶体管（TFT）的微型led显示屏由于其电流输出性能有限，导致其驱动能力不足。在这项研究中，我们提出了一种用于微型发光三极管（micro - let）的6T2C像素电路，该电路将基于gan的LED和双极结晶体管（BJT）垂直集成在单个芯片中。该像素电路利用低温多晶硅（LTPS） TFT，有效地补偿了阈值电压偏移和迁移率变化，从而解决了像素不均匀性的问题。电路仿真结果表明，当阈值电压变化±0.5 V和迁移率变化±30%时，发射电流的电流误差率（CER）分别小于4.71%和1.83%。此外，LTPS TFT可以扩展到像素电路中的非晶硅（a-Si） TFT，展示了其在实现高亮度Micro-LED显示方面的潜力，该显示由具有电流放大能力的非晶硅TFT技术驱动。这些发现验证了具有成本效益和高亮度的Micro-LED显示屏的可行性，同时也缓解了对与a-Si TFT相关的产能过剩问题的担忧。

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Investigation of LTPS and a-Si TFT pixel circuit for micro-light-emitting-triode with current gain

The driving capability of Micro-LED displays based on thin film transistor (TFT) often falls short due to limited TFT current output performance. In this study, we propose a 6T2C pixel circuit for micro light-emitting-triode (Micro-LET), which integrates GaN-based LED and bipolar junction transistor (BJT) in a single chip vertically. The proposed pixel circuit, utilizing low-temperature polysilicon (LTPS) TFT, effectively compensates for threshold voltage shifts and mobility variations, thereby addressing the issue of pixel non-uniformity. Circuit simulation results demonstrate that the current error rates (CER) of the emission current are less than 4.71 % and 1.83 %, respectively, when subjected to ±0.5 V threshold voltage change and ±30 % mobility variation. Furthermore, the LTPS TFT can be extended to amorphous silicon (a-Si) TFT in the pixel circuit, showcasing its potential in enabling high-brightness Micro-LED displays driven by a-Si TFT technology with current amplification capabilities. These findings validate the feasibility of cost-effective and highly luminous Micro-LED displays while also alleviating concerns regarding overcapacity issues associated with a-Si TFT.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.